Update Time:2026-02-28

MT29F2G01ABAGDWB: Technical Guide to Micron's 2Gb SPI NAND Flash Memory

Complete guide to MT29F2G01ABAGDWB 2Gb SPI NAND flash: specifications, interface, performance for embedded systems and IoT applications.

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MT29F2G01ABAGDWB

Introduction

Are you designing embedded systems, IoT devices, or consumer electronics requiring cost-effective, high-capacity non-volatile storage with simple serial interface? The MT29F2G01ABAGDWB represents Micron Technology's proven SPI NAND flash solution, delivering 2 gigabits (256 megabytes) of storage in compact WSON-8 package with standard 4-wire SPI interface, enabling straightforward integration with microcontrollers and SoCs requiring minimal pin count.

The MT29F2G01ABAGDWB is a 2Gb SPI NAND flash memory manufactured by Micron Technology, featuring single-level cell (SLC) NAND technology with integrated ECC (Error Correction Code), 104 MHz SPI clock support, and 3.3V operation. Targeting embedded applications where parallel NAND complexity is undesirable and eMMC cost is prohibitive, it provides the storage capacity of traditional NAND with the simplicity of serial interface—requiring only 4 pins (CS, CLK, SI, SO) versus 16+ for parallel NAND.

In this technical guide, you'll discover the MT29F2G01ABAGDWB's architecture, specifications, SPI interface details, performance characteristics, application guidance, and competitive positioning for embedded storage designs.


MT29F2G01ABAGDWB Technical Overview

The MT29F2G01ABAGDWB combines NAND flash storage with SPI serial interface and integrated error correction in a single chip optimized for space-constrained embedded applications.

Core Specifications

ParameterSpecification
Capacity2Gb (256MB)
Organization2048 blocks × 64 pages × 2112 bytes
Page Size2048 bytes data + 64 bytes spare
Block Size128KB (64 pages)
InterfaceSPI (single/dual/quad mode)
Clock SpeedUp to 104 MHz
Voltage3.3V (2.7-3.6V)
PackageWSON-8 (8mm × 6mm)
Temperature-40°C to +85°C (industrial)

Part Number Decoder

MT29F2G01ABAGDWB breakdown:

  • MT29F = Micron SPI NAND family
  • 2G = 2 gigabit capacity
  • 01 = Single die, x1 organization
  • ABA = Technology/feature code
  • GD = Speed grade
  • WB = Package variant (WSON-8)

Key Features

Integrated ECC:

  • Internal 1-bit ECC per 512 bytes
  • Transparent error correction
  • Status register reports correction

Simple SPI Interface:

  • Standard 4-wire SPI (CS, CLK, MOSI, MISO)
  • Dual and Quad SPI modes for higher throughput
  • Compatible with most microcontrollers

Bad Block Management:

  • Factory-marked bad blocks
  • Spare area for bad block tables
  • Typical <2% bad blocks at shipment

Low Power:

  • Active read: 25 mA typical
  • Standby: 25 μA typical
  • Deep power-down: 10 μA

SPI NAND Architecture

NAND Flash Organization:

The MT29F2G01ABAGDWB uses hierarchical structure:

  • DieBlocksPagesBytes
  • 2048 blocks per device
  • 64 pages per block (128KB)
  • 2112 bytes per page (2048 data + 64 spare)

Page Structure:

Page (2112 bytes):
├─ Main area: 2048 bytes (user data)
└─ Spare area: 64 bytes (ECC, metadata, bad block marker)

Operations:

  • Read: Page-level (2KB minimum)
  • Program: Page-level (must be erased first)
  • Erase: Block-level (128KB minimum)

Internal ECC:

  • 1-bit correction per 512-byte chunk
  • 4 ECC regions per 2KB page
  • Automatic during read/program operations
  • Status flags indicate correction performed

Complete Specifications

Memory Organization

ParameterValue
Total Capacity2,147,483,648 bits (2Gb)
User Data268,435,456 bytes (256MB)
Blocks2048
Pages per Block64
Bytes per Page2048 (main) + 64 (spare)

Timing Specifications

OperationTypicalMaximumUnit
Page Read2560μs
Page Program300700μs
Block Erase210ms
SPI Clock-104MHz

Endurance and Retention

ParameterSpecification
Program/Erase Cycles100,000 (typical SLC)
Data Retention10 years @ 25°C
Read Disturb100,000 reads per block

Electrical Specifications

ParameterMinTypMaxUnit
Supply Voltage2.73.33.6V
Active Read Current-2530mA
Program Current-3040mA
Standby Current-25100μA
Deep Power-Down-1050μA

Performance and SPI Interface

SPI Operating Modes

Standard SPI (x1):

  • 4 wires: CS, CLK, SI (MOSI), SO (MISO)
  • 1 bit per clock cycle
  • Up to 104 MHz clock
  • Throughput: ~13 MB/s read

Dual SPI (x2):

  • Uses SI and SO as bidirectional data
  • 2 bits per clock cycle
  • Throughput: ~26 MB/s read

Quad SPI (x4):

  • Requires additional pins (WP#, HOLD#)
  • 4 bits per clock cycle
  • Throughput: ~52 MB/s read

Command Set

Common Commands:

CommandOpcodeFunction
READ PAGE13hRead page to cache
READ CACHE03hRead from cache to SPI
PROGRAM LOAD02hLoad data to cache
PROGRAM EXECUTE10hProgram cache to page
BLOCK ERASED8hErase 128KB block
READ ID9FhRead device ID
GET FEATURE0FhRead status register

Read Operation Sequence

1. Send PAGE READ command (13h) + 3-byte address
2. Wait for device ready (poll status register)
3. Send READ CACHE command (03h)
4. Clock out 2048 bytes of data
5. Check ECC status in feature register

Program Operation Sequence

1. Send WRITE ENABLE command (06h)
2. Send PROGRAM LOAD command (02h) + data
3. Send PROGRAM EXECUTE command (10h) + address
4. Wait for program complete (poll status)
5. Check status register for errors

Application Guidelines

Typical Applications

Embedded Systems:

  • Firmware storage and boot code
  • Data logging and event recording
  • Configuration and calibration data
  • File systems (JFFS2, YAFFS2, UBIFS)

IoT Devices:

  • Sensor data buffering
  • Over-the-air update storage
  • Local data cache
  • Low-power edge devices

Consumer Electronics:

  • Set-top boxes
  • Digital cameras
  • Portable media players
  • Smart home devices

Industrial:

  • PLCs and industrial controllers
  • Medical devices
  • Automotive infotainment
  • Point-of-sale terminals

System Integration

Microcontroller Interface:

MCU SPI ──┬── CS   ───► MT29F2G01ABAGDWB
          ├── SCLK ───►
          ├── MOSI ───► SI
          └── MISO ◄─── SO

Power Supply:
3.3V ──┬── VCC (MT29F2G01ABAGDWB)
       └── 0.1μF bypass capacitor

Boot Configuration:

  • Not boot ROM (requires external controller)
  • MCU boots from internal flash, then accesses SPI NAND
  • Suitable for code storage via bootloader

Wear Leveling

Importance: NAND has limited P/E cycles (100K). Wear leveling distributes writes across blocks.

Implementation:

  • Software wear leveling in file system driver
  • Track erase counts per block
  • Remap frequently written logical addresses to different physical blocks

Commercial Solutions:

  • FTL (Flash Translation Layer) libraries
  • File systems: JFFS2, YAFFS2, UBIFS, LittleFS

Bad Block Management

Factory Bad Blocks:

  • Device ships with <2% bad blocks
  • Marked in first byte of spare area (not 0xFF)
  • Build bad block table at initialization

Runtime Bad Blocks:

  • Monitor program/erase failures
  • Mark new bad blocks in spare area
  • Remap to spare blocks

Design Guidelines

PCB Layout

Trace Routing:

  • Keep SPI traces short (<100mm)
  • Match SI/SO trace lengths (±5mm)
  • 50Ω controlled impedance for >50 MHz
  • Ground plane under SPI signals

Decoupling:

  • 0.1μF ceramic capacitor near VCC pin
  • 10μF bulk capacitor on board
  • Low ESR capacitors for high-speed operation

Clock Integrity:

  • Minimize clock trace stubs
  • Series termination resistor (22-33Ω) if ringing observed
  • Keep clock away from noisy signals

Power Supply

Supply Voltage:

  • 3.3V ±10% (2.7V - 3.6V)
  • Clean, low-noise supply
  • Avoid brownouts during erase/program

Power Sequencing:

  • No specific requirement
  • Can power up/down anytime
  • Use RESET# for clean initialization

Software Considerations

File System Selection:

File SystemBest ForWear Leveling
JFFS2Linux systemsYes (built-in)
YAFFS2Embedded LinuxYes (optimized for NAND)
UBIFSModern LinuxYes (advanced)
LittleFSMCU, RTOSYes (power-loss resilient)

Driver Requirements:

  • SPI peripheral driver
  • NAND command protocol implementation
  • Bad block handling
  • ECC checking (read feature register)

Comparison and Alternatives

Micron SPI NAND Family

Part NumberCapacitySpeedKey Difference
MT29F1G011Gb (128MB)104 MHzHalf capacity
MT29F2G01ABAGDWB2Gb (256MB)104 MHzStandard
MT29F4G014Gb (512MB)104 MHzDouble capacity

vs Parallel NAND

FeatureSPI NAND (MT29F2G01ABAGDWB)Parallel NAND
Pin Count8 pins48+ pins
InterfaceSPI (simple)Parallel (complex)
PCB AreaCompactLarge footprint
Throughput13-52 MB/s40-100 MB/s
Best ForEmbedded, space-constrainedHigh-performance storage

vs eMMC

FeatureSPI NAND (MT29F2G01ABAGDWB)eMMC
CostLowerHigher
InterfaceSPI (4-8 pins)MMC (10+ pins)
ControllerExternal (MCU)Integrated
Capacity256MB4GB-256GB typical
Best ForCost-sensitive, simpleHigh capacity, ease-of-use

When to Choose SPI NAND (MT29F2G01ABAGDWB):

  • ✅ Limited MCU pins (only 4 needed)
  • ✅ Space-constrained designs
  • ✅ Cost-sensitive applications
  • ✅ Moderate storage needs (64MB-512MB)

Conclusion

The MT29F2G01ABAGDWB delivers reliable 2Gb (256MB) SPI NAND flash storage in compact package with simple 4-wire SPI interface, making it ideal for embedded systems requiring moderate capacity non-volatile memory without parallel NAND complexity or eMMC cost. With integrated ECC, industrial temperature range, and proven SLC endurance (100K cycles), it enables straightforward storage integration for IoT, industrial, and consumer applications.

Key Advantages:

Simple Interface: 4-pin SPI (vs 16+ for parallel NAND)
Adequate Capacity: 256MB for embedded firmware/data
Integrated ECC: 1-bit correction per 512 bytes
Low Cost: More economical than eMMC
Compact: WSON-8 package (8mm × 6mm)
Industrial Grade: -40°C to +85°C operation

Design with MT29F2G01ABAGDWB? Visit AiChipLink.com for technical resources and embedded storage design consultation.

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Frequently Asked Questions

What is MT29F2G01ABAGDWB?

MT29F2G01ABAGDWB is a 2-Gb (256 MB) SPI NAND flash memory from Micron Technology, designed for embedded and IoT systems that need higher-capacity non-volatile storage with a simple SPI interface and built-in ECC support.

How does MT29F2G01ABAGDWB connect to a microcontroller?

MT29F2G01ABAGDWB uses a standard 4-wire SPI interface (CS, SCLK, SI, SO) and requires a software driver to handle page-based read/write commands, status polling, and NAND management instead of simple byte addressing.

Can MT29F2G01ABAGDWB be used for direct boot?

No, MT29F2G01ABAGDWB does not support execute-in-place (XIP) boot, so a small bootloader in internal flash or external SPI NOR is required to load code from the SPI NAND into RAM.

What are the typical applications of MT29F2G01ABAGDWB?

MT29F2G01ABAGDWB is widely used for firmware storage, data logging, file systems, configuration data, and OTA update storage in embedded devices, industrial controllers, and consumer electronics.

Does MT29F2G01ABAGDWB require bad block management?

Yes, MT29F2G01ABAGDWB requires software-based bad block management and wear leveling, either through a NAND-aware file system or a custom flash translation layer to ensure long-term reliability.

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