Update Time:2026-02-26

H5CG48AGBDX018N: Technical Guide to SK Hynix HBM2E High Bandwidth Memory

Complete guide to H5CG48AGBDX018N HBM2E: specifications, architecture, performance for AI accelerators, HPC systems, and high-end GPUs.

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H5CG48AGBDX018N

Introduction

Are you designing AI accelerators, high-performance computing systems, or next-generation graphics processors requiring extreme memory bandwidth? The H5CG48AGBDX018N represents SK Hynix's advanced HBM2E (High Bandwidth Memory 2E) solution, delivering unprecedented memory performance for the most demanding computational workloads in artificial intelligence, scientific computing, and professional visualization.

The H5CG48AGBDX018N is a high-bandwidth memory stack manufactured by SK Hynix, the world's second-largest memory manufacturer. This HBM2E device stacks multiple DRAM dies vertically using Through-Silicon Via (TSV) technology, delivering up to 460 GB/s bandwidth per stack with lower power consumption than traditional GDDR memory solutions. Designed for integration with AI accelerators, GPU processors, and HPC systems, it enables the massive data throughput required for modern deep learning training, inference, and scientific simulations.

According to TrendForce's 2024 HBM market analysis, HBM demand is experiencing explosive growth driven by generative AI and large language models (LLMs), with the HBM market expected to grow at 100%+ CAGR through 2025. The H5CG48AGBDX018N addresses this demand by providing the extreme bandwidth and capacity needed for AI training clusters, inference servers, and HPC applications where memory performance is the critical bottleneck.

In this comprehensive technical guide, you'll discover the H5CG48AGBDX018N's architecture, complete specifications, performance characteristics, AI/HPC applications, implementation considerations, and competitive positioning to support informed memory selection for high-performance computing designs.


H5CG48AGBDX018N Technical Overview

The H5CG48AGBDX018N is a vertically-integrated memory solution that revolutionizes memory architecture through 3D stacking and advanced packaging technology.

Core Specifications Summary

ParameterSpecificationSignificance
Memory TypeHBM2E (High Bandwidth Memory 2E)Enhanced 2nd generation HBM
Capacity per Stack8 GB (16 Gb)Single stack capacity
Stack Height8-High (8H)8 DRAM dies stacked
Interface Width1024-bitMassive parallel interface
Data Rate3.6 Gbps per pinHigh-speed signaling
Bandwidth460 GB/s per stackExtreme throughput
Voltage1.2V coreLow power operation
PackageInterposer-basedSilicon interposer integration
Temperature0°C to 95°CData center grade

HBM2E Generation Overview

HBM2E represents the enhanced second generation of High Bandwidth Memory:

GenerationData RateBandwidth (1024-bit)CapacityYear
HBM11.0 Gbps128 GB/s1-4 GB2015
HBM22.0 Gbps256 GB/s4-8 GB2016
HBM2E3.6 Gbps460 GB/s8-16 GB2020
HBM36.4 Gbps819 GB/s24+ GB2023

The H5CG48AGBDX018N's HBM2E technology provides:

  • 80% bandwidth increase over HBM2
  • Higher capacity per stack (up to 16GB with 12H configs)
  • Better power efficiency (more GB/s per watt)
  • Proven ecosystem compatibility

Part Number Decoder

Understanding SK Hynix nomenclature:

H5CG48AGBDX018N breakdown:

  • H5 = SK Hynix memory
  • CG = HBM2E product family
  • 48 = Density code (8GB capacity)
  • AGBD = Speed and configuration
  • X = Revision
  • 018N = Package and grade designation

Target Applications

The H5CG48AGBDX018N is optimized for:

AI/ML Training and Inference:

  • Large language models (GPT, LLaMA, PaLM)
  • Computer vision models
  • Recommendation systems
  • Generative AI (diffusion models, GANs)

High-Performance Computing:

  • Scientific simulations
  • Computational fluid dynamics (CFD)
  • Molecular dynamics
  • Weather modeling

Graphics and Visualization:

  • Professional GPUs (NVIDIA Quadro, AMD Radeon Pro)
  • Real-time ray tracing
  • 8K video editing
  • Scientific visualization

Data Analytics:

  • Graph analytics
  • In-memory databases
  • Real-time data processing
  • Big data acceleration

HBM2E Architecture and Technology

Understanding HBM2E architecture reveals how the H5CG48AGBDX018N achieves extreme bandwidth and efficiency through innovative 3D stacking and packaging.

3D Stacking Technology

The H5CG48AGBDX018N uses Through-Silicon Via (TSV) technology to vertically stack DRAM dies:

┌─────────────────────────────────────────────┐
│    H5CG48AGBDX018N 3D Stack Architecture     │
├─────────────────────────────────────────────┤
│                                              │
│  ┌──────────────────────────────────────┐  │
│  │   Die 7: DRAM (2GB)                  │  │
│  │          ↕ TSV                       │  │
│  ├──────────────────────────────────────┤  │
│  │   Die 6: DRAM (2GB)                  │  │
│  │          ↕ TSV                       │  │
│  ├──────────────────────────────────────┤  │
│  │   Die 5: DRAM (2GB)                  │  │
│  │          ↕ TSV                       │  │
│  ├──────────────────────────────────────┤  │
│  │   Die 4: DRAM (2GB)                  │  │
│  │          ↕ TSV                       │  │
│  ├──────────────────────────────────────┤  │
│  │   Die 3: DRAM (2GB)                  │  │
│  │          ↕ TSV                       │  │
│  ├──────────────────────────────────────┤  │
│  │   Die 2: DRAM (2GB)                  │  │
│  │          ↕ TSV                       │  │
│  ├──────────────────────────────────────┤  │
│  │   Die 1: DRAM (2GB)                  │  │
│  │          ↕ TSV                       │  │
│  ├──────────────────────────────────────┤  │
│  │   Die 0: Base Logic + DRAM (2GB)     │  │
│  │   - PHY (Physical Interface)         │  │
│  │   - Test circuits                    │  │
│  └──────────────────────────────────────┘  │
│                    ↓                         │
│         Silicon Interposer (routing)         │
│                    ↓                         │
│              Host Processor                  │
│         (GPU / AI Accelerator / CPU)         │
│                                              │
└─────────────────────────────────────────────┘

TSV Technology Benefits:

  • Ultra-short interconnects: <100μm vertical connections
  • Massive parallelism: 1024 data pins per stack
  • Low latency: Minimal signal propagation delay
  • High density: Vertical stacking saves PCB space

Wide I/O Architecture

The H5CG48AGBDX018N implements 1024-bit wide interface:

Channel Structure:

  • 8 independent channels per stack
  • Each channel: 128-bit data width
  • Pseudo-channels: 2 pseudo-channels per channel (16 total)

Comparison to Traditional Memory:

Memory TypeInterface WidthPinsBandwidth (@ 3.6 Gbps)
DDR4-320064-bit6425.6 GB/s
GDDR6-1600032-bit3264 GB/s
HBM2E (H5CG48AGBDX018N)1024-bit1024460 GB/s

Key Insight: HBM2E achieves 18x bandwidth vs DDR4 through wide parallel interface rather than just higher frequency.

Silicon Interposer Integration

The H5CG48AGBDX018N connects to host processor via silicon interposer:

Interposer Function:

  • Routes 1024 signals from HBM to processor
  • Provides extremely short traces (~5-10mm)
  • Enables high signal integrity at 3.6 Gbps
  • Houses multiple HBM stacks (typically 4-8 stacks per GPU)

Package-Level Integration:

┌────────────────────────────────────────┐
│         GPU/Processor Die              │
│    ┌────────────────────────────┐     │
│    │  HBM PHY  HBM PHY  HBM PHY │     │
│    └──────┬──────┬──────┬───────┘     │
│           │      │      │             │
└───────────┼──────┼──────┼─────────────┘
            ↓      ↓      ↓
   ═══════════════════════════════════  Silicon Interposer
            ↓      ↓      ↓
       ┌────┴──┐ ┌┴────┐ ┌┴────┐
       │ HBM2E │ │HBM2E│ │HBM2E│  (H5CG48AGBDX018N)
       │ Stack │ │Stack│ │Stack│
       └───────┘ └─────┘ └─────┘

DRAM Architecture

Each DRAM die in the H5CG48AGBDX018N follows standard DRAM architecture:

Internal Organization:

  • Multiple banks (16-32 banks per die)
  • Row/column addressing
  • Sense amplifiers and bit lines
  • Refresh circuitry

HBM-Specific Features:

  • Optimized for wide, parallel access
  • Lower per-pin speeds than GDDR (less power)
  • Reduced capacitance due to short traces

Power Efficiency

HBM2E delivers superior power efficiency:

Power Breakdown (typical @ 460 GB/s):

  • Active power: ~12-15W per stack
  • Idle power: ~1-2W per stack
  • Efficiency: ~31 GB/s per watt

Comparison:

  • GDDR6 @ 448 GB/s: ~25W = 18 GB/s per watt
  • HBM2E @ 460 GB/s: ~13W = 35 GB/s per watt
  • Advantage: HBM2E is ~2x more power-efficient

This efficiency is critical for:

  • Data center AI accelerators (power budget constrained)
  • HPC systems (cooling limitations)
  • High-density GPU clusters

Complete Technical Specifications

Let's examine the detailed specifications defining the H5CG48AGBDX018N's capabilities and operational parameters.

Memory Organization

ParameterValueDetails
Stack Capacity8 GBPer H5CG48AGBDX018N stack
DRAM Dies8 dies8-High (8H) stack
Capacity per Die1 GB (8 Gb)Each die contributes 1GB
Organization1024-bit interface8 channels × 128-bit
Channels8 independentParallel memory channels
Banks per Channel16-32Bank-level parallelism

Interface Specifications

Physical Interface:

  • Data Rate: 3.6 Gbps per pin (DDR signaling)
  • Interface Width: 1024 bits (128 bits × 8 channels)
  • Clock Frequency: 1.8 GHz (effective 3.6 Gbps with DDR)
  • Signaling: Differential for clock, single-ended for data

Bandwidth Calculation:

Per-Channel Bandwidth:
= (Data Rate) × (Width) / 8
= 3.6 Gbps × 128 bits / 8
= 57.6 GB/s per channel

Total Stack Bandwidth:
= 57.6 GB/s × 8 channels
= 460.8 GB/s per stack

Performance Specifications

Theoretical Maximum:

  • Peak Bandwidth: 460.8 GB/s per stack
  • Aggregate (4 stacks): 1,843 GB/s (typical GPU config)
  • Aggregate (8 stacks): 3,686 GB/s (high-end AI accelerator)

Practical Achievable:

  • Effective bandwidth: ~90-95% of theoretical
  • Sustained throughput: 420-440 GB/s per stack

Latency:

  • Access latency: ~100-120ns (lower than GDDR6)
  • Benefit: Shorter physical distance to processor

Electrical Specifications

Voltage Requirements:

  • Core Voltage (VDD): 1.2V nominal
  • I/O Voltage (VDDQ): 1.2V nominal
  • Tolerance: ±3%

Power Consumption:

  • Active (max bandwidth): 12-15W per stack
  • Typical operation: 10-12W per stack
  • Idle/Low power: 1-2W per stack

Power Efficiency:

  • GB/s per Watt: ~31-38 GB/s/W
  • Industry-leading efficiency compared to GDDR6 (~18 GB/s/W)

Thermal Specifications

Operating Temperature:

  • Junction temperature: 0°C to 95°C
  • Typical operation: 60-85°C in data center
  • Thermal management: Active cooling required

Thermal Characteristics:

  • TDP per stack: 12-15W
  • Thermal resistance: Depends on package integration
  • Cooling: Heat spreader and fan/liquid cooling

Reliability Specifications

Endurance and Reliability:

  • MTBF: >1,000,000 hours
  • Data Retention: Per JEDEC DRAM standards
  • Error Correction: On-die ECC typical
  • Refresh: Auto-refresh with hardware support

Environmental:

  • Humidity: 5-95% non-condensing
  • Altitude: Up to 3,000m operational
  • Standards: JEDEC HBM2E specification compliant

Performance Analysis and Benchmarks

How does the H5CG48AGBDX018N perform in real-world AI and HPC workloads? Let's examine empirical performance data.

Bandwidth Performance

Single Stack Bandwidth:

  • Theoretical max: 460.8 GB/s
  • Achievable sustained: 420-440 GB/s (91-95% efficiency)
  • Random access: 380-400 GB/s (82-87% efficiency)

Multi-Stack Configurations:

ConfigurationTotal BandwidthTypical Application
2 Stacks920 GB/sEntry AI accelerator
4 Stacks1,840 GB/sStandard GPU/AI chip
6 Stacks2,760 GB/sHigh-end GPU
8 Stacks3,680 GB/sFlagship AI accelerator

Comparison with GPU Generations:

GPU/AcceleratorHBM TypeStacksTotal BandwidthYear
NVIDIA V100HBM24900 GB/s2017
NVIDIA A100HBM2E (similar to H5CG48AGBDX018N)51,935 GB/s2020
NVIDIA H100HBM353,350 GB/s2022
AMD MI250XHBM2E83,277 GB/s2021

Latency Characteristics

Memory Access Latency:

  • Sequential access: 80-100ns
  • Random access: 100-120ns
  • GDDR6 comparison: 120-150ns (HBM advantage)

Latency Components:

Total Access Latency Breakdown:

Component                Time
─────────────────────────────
Command decode:          10ns
TSV traversal:           5-10ns
DRAM cell access:        40-50ns
Data return (TSV):       5-10ns
PHY decode:              10-15ns
─────────────────────────────
Total:                   80-105ns

Why HBM Latency is Lower:

  • Physical proximity to processor (5-10mm vs 100+mm for GDDR)
  • Shorter electrical paths
  • Optimized signaling

AI Training Performance

Deep Learning Training Benchmarks:

BERT-Large Training (Language Model):

  • Memory bandwidth utilization: 85-90%
  • Throughput improvement vs HBM2: +35-40%
  • Training time reduction: ~25% faster

ResNet-50 Training (Computer Vision):

  • Memory bandwidth utilization: 80-85%
  • Images/second improvement: +30-35% vs HBM2
  • Batch size enabled: Larger batches with 8GB capacity

GPT-3 Training (175B parameters):

  • Memory-bound phases: Critical bottleneck
  • HBM2E bandwidth essential for model parallel training
  • Communication overhead reduction: Significant

AI Inference Performance

LLM Inference (GPT-style models):

  • Latency: 40-60ms per token (model dependent)
  • Throughput: 15-25 tokens/second
  • Memory utilization: 70-80% of bandwidth

Object Detection (YOLOv8):

  • FPS: 120-150 FPS @ 1080p
  • Latency: <8ms per frame
  • Batch processing: Enables larger batches

HPC Workload Performance

Computational Fluid Dynamics (CFD):

  • Memory bandwidth utilization: 75-85%
  • Speedup vs DDR4: 8-10x
  • Scaling: Near-linear with HBM capacity

Molecular Dynamics Simulation:

  • Particle updates/sec: 40-50% improvement vs HBM2
  • Memory access pattern: Random-access intensive (HBM advantage)

Power Efficiency

Performance per Watt:

ConfigurationBandwidthPowerEfficiency
4× H5CG48AGBDX018N1,840 GB/s50W36.8 GB/s/W
GDDR6 Equivalent1,792 GB/s100W17.9 GB/s/W
Advantage-50% less power2x efficiency

This efficiency enables:

  • Higher density data center deployments
  • Reduced cooling requirements
  • Lower total cost of ownership (TCO)

AI and HPC Applications

Where does the H5CG48AGBDX018N excel in artificial intelligence and high-performance computing? Let's examine specific use cases.

1. Large Language Model Training

Application:

  • GPT, LLaMA, PaLM, Claude training
  • 70B to 175B+ parameter models
  • Distributed training across GPU clusters

Memory Requirements:

  • Model weights: 70B params × 2 bytes (FP16) = 140GB
  • Activations: Batch size dependent (10-50GB)
  • Gradients: Same as weights (140GB)
  • Optimizer states: Adam ~2x weights (280GB)
  • Total per node: 500GB+ typical

H5CG48AGBDX018N Role:

  • Per-GPU memory: 32-80GB (4-10 stacks)
  • Bandwidth critical: Weight updates, gradient aggregation
  • Multi-GPU: Model parallelism across 8-64 GPUs

Performance Impact:

  • HBM2E bandwidth reduces communication overhead
  • Enables larger batch sizes (better GPU utilization)
  • 25-35% training speedup vs HBM2

2. AI Inference Servers

Application:

  • Real-time inference serving
  • ChatGPT-style applications
  • Recommendation systems
  • Computer vision APIs

Requirements:

  • Low latency: <100ms response time
  • High throughput: 1000+ requests/second
  • Batch inference: Aggregate requests for efficiency

H5CG48AGBDX018N Benefits:

  • Capacity: 8GB per stack holds model in memory
  • Bandwidth: Fast weight loading for batch inference
  • Latency: Low memory access time reduces inference latency

Deployment:

  • NVIDIA A100 (5× HBM2E) → 40GB model capacity
  • AMD MI250X (8× HBM2E) → 64GB model capacity
  • Multi-instance GPU (MIG) for concurrent serving

3. Scientific Computing

Applications:

  • Weather simulation (WRF, MPAS)
  • Molecular dynamics (GROMACS, LAMMPS)
  • Computational fluid dynamics (OpenFOAM)
  • Quantum chemistry (Gaussian, VASP)

Characteristics:

  • Memory-intensive: Large datasets in memory
  • Bandwidth-sensitive: Frequent memory access
  • Floating-point: Double-precision (FP64) common

H5CG48AGBDX018N Advantages:

  • Bandwidth: 460 GB/s sustains computational throughput
  • Capacity: 8GB+ per GPU sufficient for many simulations
  • ECC: Error correction critical for scientific accuracy

Performance:

  • CFD simulations: 2-3x faster vs DDR4
  • Molecular dynamics: 8-10x speedup
  • Memory-bound kernels: Near-linear scaling with bandwidth

4. Graphics and Rendering

Professional Visualization:

  • 8K video editing
  • Real-time ray tracing
  • CAD/CAM rendering
  • Scientific visualization

Requirements:

  • High resolution: 8K = 33 megapixels
  • Frame buffers: Multiple buffers (80-120GB)
  • Textures: Large texture datasets
  • Real-time: 30-60 FPS rendering

HBM2E Benefits:

  • Massive bandwidth for 8K video streams
  • Large capacity for high-resolution assets
  • Low latency for interactive editing

5. Data Analytics

In-Memory Databases:

  • Graph databases (Neo4j, TigerGraph)
  • In-memory SQL (SAP HANA, MemSQL)
  • Real-time analytics (Apache Spark)

Characteristics:

  • Random access: Graph traversal, queries
  • Large datasets: Terabyte-scale graphs
  • Low latency: Sub-millisecond query response

H5CG48AGBDX018N Fit:

  • Random access performance (low latency)
  • Bandwidth for parallel query execution
  • Capacity for in-memory working sets

Application Suitability Matrix

Application DomainBandwidth NeedCapacity NeedLatency SensitivityHBM2E Suitability
LLM Training⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐ Essential
AI Inference⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐ Excellent
HPC Simulation⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐ Ideal
Graphics/Rendering⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐ Perfect
Data Analytics⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐⭐ Very Good
General Computing⭐⭐⭐⭐⭐⭐⭐ Overkill (use DDR)

Implementation Considerations

What factors affect H5CG48AGBDX018N implementation in system designs? Let's examine integration challenges and requirements.

Package Integration

Silicon Interposer Requirements:

  • Manufacturing: Advanced packaging facility required
  • Design complexity: High-density routing (1000+ signals)
  • Cost: Interposer adds significant cost (~$100-500 per unit)
  • Yield: Package-level yield impacts total cost

CoWoS (Chip-on-Wafer-on-Substrate):

  • TSMC's advanced packaging technology
  • Enables HBM + processor integration
  • Used by NVIDIA (A100, H100), AMD (MI series)

Alternative Packaging:

  • Intel EMIB (Embedded Multi-die Interconnect Bridge)
  • Samsung I-Cube⁴
  • AMD 3D V-Cache (different application)

Thermal Management

Thermal Challenges:

  • Power density: 12-15W in small footprint
  • Stacked dies: Heat must conduct through stack
  • Processor proximity: HBM sits very close to hot GPU/CPU

Cooling Solutions:

Cooling TypeEffectivenessCostTypical Use
Air coolingLimited$Workstations
Vapor chamberGood$$High-end GPUs
Liquid coolingExcellent$$$Data center AI
Immersion coolingBest$$$$Extreme HPC

Design Considerations:

  • Heat spreader integration with HBM stack
  • Thermal interface materials (TIM) selection
  • Package-level thermal simulation required

Power Delivery

Voltage Regulation:

  • Clean 1.2V supply: Low noise critical for signal integrity
  • Current capacity: 10-15A per stack (typical)
  • Decoupling: Extensive on-interposer capacitance

Power Distribution Network (PDN):

  • Low-impedance power planes
  • Multiple voltage domains (core, I/O)
  • Current monitoring for power management

Signal Integrity

High-Speed Signaling Challenges:

  • 3.6 Gbps per pin: Requires careful impedance control
  • 1024 pins: Massive parallel interface
  • Crosstalk: Adjacent signals can interfere
  • Jitter: Timing variations affect reliability

Mitigation Strategies:

  • Differential signaling for clocks
  • Impedance matching (50Ω typical)
  • Ground shielding between signal groups
  • DFE (Decision Feedback Equalization) in PHY

Software and Driver Support

Operating System:

  • Linux: Full HBM support (transparent to OS)
  • Windows: GPU driver manages HBM
  • Bare-metal: Direct control via memory controller

Programming Models:

  • CUDA: NVIDIA's programming model (HBM transparent)
  • ROCm: AMD's HIP programming (HBM transparent)
  • OpenCL: Cross-platform GPU programming
  • SYCL: C++ abstraction for heterogeneous computing

Memory Management:

  • Unified memory (CPU/GPU address space)
  • Explicit memory transfers (cudaMemcpy)
  • Peer-to-peer (direct GPU-GPU transfers)

Cost Considerations

HBM2E Pricing:

  • Component cost: $100-300 per 8GB stack (estimated)
  • Package cost: $200-800 (interposer, assembly)
  • Total memory subsystem: $500-2,500 (4-8 stacks)

Cost Drivers:

  • Advanced packaging (interposer)
  • Lower volume vs GDDR6 (economies of scale)
  • 3D stacking manufacturing complexity
  • Testing and validation

TCO (Total Cost of Ownership):

  • Higher upfront cost offset by power savings
  • Data center: Electricity + cooling over 3-5 years
  • HBM2E TCO often better than GDDR6 at scale

Comparison with Alternative Memory

How does the H5CG48AGBDX018N compare to other high-performance memory solutions? Let's examine competitive alternatives.

HBM2E vs GDDR6

FeatureHBM2E (H5CG48AGBDX018N)GDDR6Analysis
Bandwidth per Stack/Device460 GB/s64-72 GB/sHBM 7x advantage
Total System Bandwidth1,840-3,680 GB/s (4-8 stacks)768-896 GB/s (12 chips)HBM 2-4x advantage
Power Efficiency31-38 GB/s/W18-22 GB/s/WHBM 2x better
Latency80-100ns120-150nsHBM lower
Capacity per Device8 GB1-2 GBHBM 4-8x higher
Cost per GBHigherLowerGDDR6 advantage
PCB ComplexityVery high (interposer)ModerateGDDR6 simpler
Ecosystem MaturityGrowingMatureGDDR6 broader

When to Choose HBM2E (H5CG48AGBDX018N):

  • ✅ AI training (memory bandwidth critical)
  • ✅ HPC workloads (scientific computing)
  • ✅ Data center deployments (power efficiency matters)
  • ✅ High-end professional GPUs

When GDDR6 Sufficient:

  • ✅ Gaming GPUs (cost-sensitive)
  • ✅ Mainstream workstations
  • ✅ Lower-power inference
  • ✅ Consumer graphics cards

HBM2E vs HBM3

FeatureHBM2E (H5CG48AGBDX018N)HBM3Winner
Data Rate3.6 Gbps6.4-8.0 GbpsHBM3
Bandwidth460 GB/s819-1,024 GB/sHBM3 (78-122% faster)
Capacity8-16 GB per stack24-32 GB per stackHBM3 (3-4x)
Power12-15W per stack15-20W per stackHBM2E (lower)
AvailabilityMature (2020+)Emerging (2023+)HBM2E
CostModeratePremiumHBM2E (30-50% cheaper)
EcosystemBroadGrowingHBM2E

HBM2E (H5CG48AGBDX018N) Advantages:

  • Mature technology with proven reliability
  • Lower cost (important for volume deployments)
  • Broad ecosystem support (more GPU/accelerator options)
  • Adequate bandwidth for many current AI workloads

HBM3 Advantages:

  • Future-proofing for next-gen AI models
  • Higher capacity per stack (reduces stack count)
  • Necessary for largest LLMs (GPT-4, PaLM-2 scale)

Recommendation: HBM2E remains excellent choice for 2024-2025 deployments; HBM3 for bleeding-edge requirements.

HBM2E vs DDR5

MetricHBM2E (H5CG48AGBDX018N)DDR5-5600Analysis
Bandwidth (single channel)460 GB/s per stack44.8 GB/s per channelHBM 10x advantage
Latency80-100ns70-80nsDDR5 slightly better
Power per GB/sLowModerateHBM more efficient
CostVery highLowDDR5 10-20x cheaper
ApplicationAI/HPC/GraphicsGeneral computingDifferent markets

Key Insight: HBM and DDR serve completely different markets—not direct competitors.

Competitive HBM2E Alternatives

ManufacturerProductCapacitySpeedNotes
SK HynixH5CG48AGBDX018N8 GB3.6 GbpsMarket leader, ~50% share
SamsungK4Z80325BC-HC188 GB3.2-3.6 GbpsStrong competitor, ~35% share
MicronMT61K512M32JE-198 GB3.2 GbpsGrowing presence, ~10% share
SamsungK4ZAF325BM-HC1816 GB3.6 GbpsHigher capacity variant

SK Hynix (H5CG48AGBDX018N) Market Position:

  • Market leader: Largest HBM market share
  • Technology leadership: First to mass production HBM2E
  • Customer base: NVIDIA (A100, H100), AMD, Intel
  • Quality reputation: Proven reliability in demanding applications

Conclusion

The H5CG48AGBDX018N represents SK Hynix's advanced HBM2E technology, delivering extreme memory bandwidth and capacity essential for modern AI training, high-performance computing, and professional graphics workloads. With 460 GB/s bandwidth per stack, 8GB capacity, and 2x power efficiency versus GDDR6, this memory solution enables the performance required for large language model training, scientific simulations, and data-intensive analytics that define cutting-edge computing.

Key Advantages:

Extreme Bandwidth: 460 GB/s per stack, 1.8-3.7 TB/s in multi-stack configs
Power Efficient: 31-38 GB/s per watt, 2x better than GDDR6
High Capacity: 8GB per stack, 32-64GB typical GPU configurations
Low Latency: 80-100ns, faster than GDDR due to proximity
Proven Technology: Deployed in NVIDIA A100/H100, AMD MI series
Market Leader: SK Hynix commands ~50% HBM market share

For AI researchers training frontier models, HPC engineers designing supercomputers, or architects planning data center infrastructure, the H5CG48AGBDX018N delivers the memory performance that enables breakthrough computational capabilities.

Planning HBM2E integration for your next AI accelerator or HPC system? Visit AiChipLink.com for technical resources, reference architectures, and expert consultation on high-bandwidth memory solutions and system design.

Leverage proven HBM2E technology for extreme-performance computing—the H5CG48AGBDX018N powers the AI and HPC breakthroughs defining modern technology.

 

 

 

 


 

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Written by Jack Elliott from AIChipLink.

 

AIChipLink, one of the fastest-growing global independent electronic   components distributors in the world, offers millions of products from thousands of manufacturers, and many of our in-stock parts is available to ship same day.

 

We mainly source and distribute integrated circuit (IC) products of brands such as BroadcomMicrochipTexas Instruments, InfineonNXPAnalog DevicesQualcommIntel, etc., which are widely used in communication & network, telecom, industrial control, new energy and automotive electronics. 

 

Empowered by AI, Linked to the Future. Get started on AIChipLink.com and submit your RFQ online today! 

 

 

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