Microchip TC429EPA
Manufacturer No:
TC429EPA
Manufacturer:
Package:
8-DIP (0.300, 7.62mm)
Description:
6 A MOSFET Gate Driver
Quantity:
Delivery:
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In Stock :Available
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TC429EPA information
Microchip TC429EPA technical specifications, attributes, parameters and parts with similar specifications to Microchip TC429EPA.
- Type
- Parameter
- MOSFET Driver Type
- Low Side
- Configuration
- Inverting
- Maximum Supply Voltage (V)
- 18
- Peak Source Output (A)
- 6
- Peak Sink Output (A)
- 6
- Source Resistance (Ω)
- 2.5
- Sink Resistance (Ω)
- 2.5
- Propagation Delay t<sub>D1</sub> (ns)
- 53
- Propagation Delay t<sub>D2</sub> (ns)
- 60
- Rise Time (t<sub>R</sub>, ns)
- 35
- Fall Time (t<sub>F</sub>, ns)
- 35
- Capacitive Load Drive
- 2,500 pF in 35 ns
Download datasheets and manufacturer documentation for Microchip TC429EPA.
Application Notes:
User Guide:
Data Sheets:
The TC429 is a high-speed, single output, CMOS-level translator and gate driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5 Ω output impedance and 6 A peak output current drive. This device can typically switch a 2,500 pF capacitive load in 25 ns, with a typical delay time through the device of 60 ns. Rapidly switching the load will minimize MOSFET transition power loss. The device will accept TTL and CMOS input logic voltages, or any voltage input up to 18 V without damage, producing an output signal which will swing within 25 mV of the power rails. Logic input current is under 10 µA, making direct interface to CMOS/bipolar switch-mode power supply controllers easy, input "speed-up" capacitors are not required, and the CMOS design minimizes quiescent power supply current requirements. For noninverting applications, or applications requiring latch-up protection, see the MCP1406/7 data sheet.
User Guide
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