

DIODES FZT705T3DW
Manufacturer No:
FZT705T3DW
Manufacturer:
Package:
TO-261-4, TO-261AA
Description:
PNP - Darlington -55°C ~ 150°C (TJ) 10µA TO-261-4, TO-261AA Surface Mount
Quantity:
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FZT705T3DW information
DIODES FZT705T3DW technical specifications, attributes, parameters and parts with similar specifications to DIODES FZT705T3DW.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Supplier Device Package
- SOT-223-3
- Package
- Bulk
- Mfr
- Diodes Incorporated
- Product Status
- Obsolete
- Series
- C112
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Part Status
- Obsolete
- Number of Positions
- 3
- Color
- Multiple
- Shielding
- Shielded
- Number of Positions Loaded
- All
- Cable Type
- Round
- Power - Max
- 1.2 W
- Usage
- Industrial Environments
- Transistor Type
- PNP - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 3000 @ 1A, 5V
- Current - Collector Cutoff (Max)
- 10µA
- 1st Connector
- M12 Female
- Vce Saturation (Max) @ Ib, Ic
- 2.5V @ 2mA, 2A
- 2nd Connector
- Wire Leads
- Voltage - Collector Emitter Breakdown (Max)
- 120 V
- Current - Collector (Ic) (Max)
- 2 A
- Length
- 16.40 (5.00m)
Download datasheets and manufacturer documentation for DIODES FZT705T3DW.
FZT705T3DW Overview
In this device, the DC current gain is 3000 @ 1A, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 2mA, 2A.Supplier device package SOT-223-3 comes with the product.The device exhibits a collector-emitter breakdown at 120 V.
FZT705T3DW Features
the DC current gain for this device is 3000 @ 1A, 5V
the vce saturation(Max) is 2.5V @ 2mA, 2A
the supplier device package of SOT-223-3
FZT705T3DW Applications
There are a lot of Diodes
FZT705T3DW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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