Diodes DNLS350E-13
Diodes DNLS350E-13

Diodes DNLS350E-13

Manufacturer No:

DNLS350E-13

Manufacturer:

Diodes

Package:

TO-261-4, TO-261AA

Description:

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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DNLS350E-13 information

Diodes DNLS350E-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes DNLS350E-13.

  • Type
  • Parameter
  • Factory Lead Time
  • 19 Weeks
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-261-4, TO-261AA
  • Number of Pins
  • 4
  • Weight
  • 7.994566mg
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2008
  • JESD-609 Code
  • e3
  • Pbfree Code
  • yes
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 4
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Matte Tin (Sn)
  • Subcategory
  • Other Transistors
  • Max Power Dissipation
  • 1W
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • 260
  • Time@Peak Reflow Temperature-Max (s)
  • 40
  • Base Part Number
  • DNLS350
  • Number of Elements
  • 1
  • Element Configuration
  • Single
  • Case Connection
  • COLLECTOR
  • Transistor Application
  • SWITCHING
  • Gain Bandwidth Product
  • 100MHz
  • Polarity/Channel Type
  • NPN
  • Transistor Type
  • NPN
  • Collector Emitter Voltage (VCEO)
  • 50V
  • Max Collector Current
  • 3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 100 @ 2A 2V
  • Current - Collector Cutoff (Max)
  • 100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 290mV @ 200mA, 2A
  • Collector Emitter Breakdown Voltage
  • 50V
  • Transition Frequency
  • 100MHz
  • Collector Emitter Saturation Voltage
  • 290mV
  • Max Breakdown Voltage
  • 50V
  • Collector Base Voltage (VCBO)
  • 60V
  • Emitter Base Voltage (VEBO)
  • 6V
  • Continuous Collector Current
  • 3A
  • Height
  • 1.6mm
  • Length
  • 6.5mm
  • Width
  • 3.5mm
  • REACH SVHC
  • No SVHC

Download datasheets and manufacturer documentation for Diodes DNLS350E-13.

Datasheets:

Environmental Information:

PCN Other:

DNLS350E-13 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 2V.The collector emitter saturation voltage is 290mV, which allows for maximum design flexibility.When VCE saturation is 290mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 3A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 3A volts can be achieved.

DNLS350E-13 Features


the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz


DNLS350E-13 Applications


There are a lot of Diodes Incorporated
DNLS350E-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

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Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

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Step6：Packaging Box

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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