

DIODES DMN3030LSS-13
Manufacturer No:
DMN3030LSS-13
Manufacturer:
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 18m ? @ 9A, 10V ±25V 741pF @ 15V 25nC @ 10V 8-SOIC (0.154, 3.90mm Width)
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DMN3030LSS-13 information
DIODES DMN3030LSS-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN3030LSS-13.
- Type
- Parameter
- Factory Lead Time
- 7 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Weight
- 850.995985mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2012
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Additional Feature
- HIGH RELIABILITY
- Subcategory
- FET General Purpose Powers
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 40
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Number of Channels
- 1
- Power Dissipation-Max
- 2.5W Ta
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 3.2 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 18m ? @ 9A, 10V
- Vgs(th) (Max) @ Id
- 2.1V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 741pF @ 15V
- Current - Continuous Drain (Id) @ 25°C
- 9A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- Rise Time
- 4.5ns
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- ±25V
- Fall Time (Typ)
- 14 ns
- Turn-Off Delay Time
- 18 ns
- Continuous Drain Current (ID)
- 9A
- Gate to Source Voltage (Vgs)
- 25V
- Drain Current-Max (Abs) (ID)
- 9A
- Drain to Source Breakdown Voltage
- 30V
- Pulsed Drain Current-Max (IDM)
- 40A
Download datasheets and manufacturer documentation for DIODES DMN3030LSS-13.
Environmental Information:
DMN3030LSS-13 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 741pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.There is no drain current on this device since the maximum continuous current it can conduct is 9A.As a result of its turn-off delay time, which is 18 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 40A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3.2 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
DMN3030LSS-13 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
based on its rated peak drain current 40A.
DMN3030LSS-13 Applications
There are a lot of Diodes Incorporated
DMN3030LSS-13 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
User Guide
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