DIODES DMT10H009LCG-7

Manufacturer No:

DMT10H009LCG-7

Manufacturer:

DIODES

Package:

8-PowerVDFN

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.8m ? @ 20A, 10V ±20V 2309pF @ 50V 20.2nC @ 4.5V 100V 8-PowerVDFN

Quantity:

In Stock :2241

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, Jun 12 - Sat, Jun 13, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

Available from AS9120 Certified Supplier, AIChipLink delivers high-reliability electronic components supported by certified quality management, rigorous inspection processes, counterfeit mitigation controls, and full traceability systems. Our operations comply with AS9120, ISO 9001:2015, and IECQ ESD standards to support aerospace, industrial, defense, and mission-critical applications.

PURCHASE

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMT10H009LCG-7 Information

DIODES DMT10H009LCG-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMT10H009LCG-7.

Type
Parameter

Factory Lead Time
19 Weeks

Mounting Type
Surface Mount

Package / Case
8-PowerVDFN

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

JESD-609 Code
e4

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)

Technology
MOSFET (Metal Oxide)

Type
Parameter

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
30

Power Dissipation-Max
1W Ta

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
8.8m ? @ 20A, 10V

Vgs(th) (Max) @ Id
2.5V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
2309pF @ 50V

Current - Continuous Drain (Id) @ 25°C
12.4A Ta 47A Tc

Gate Charge (Qg) (Max) @ Vgs
20.2nC @ 4.5V

Drain to Source Voltage (Vdss)
100V

Download datasheets and manufacturer documentation for DIODES DMT10H009LCG-7.

DMT10H009LCG-7 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2309pF @ 50V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.