

DIODES DMP21D0UFD-7
Manufacturer No:
DMP21D0UFD-7
Manufacturer:
Package:
3-UDFN
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 495m ? @ 800mA, 4.5V ±8V 80pF @ 10V 3nC @ 4.5V 20V 3-UDFN
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DMP21D0UFD-7 information
DIODES DMP21D0UFD-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMP21D0UFD-7.
- Type
- Parameter
- Factory Lead Time
- 17 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 3-UDFN
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- JESD-609 Code
- e4
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Additional Feature
- LOW THRESHOLD
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 40
- Pin Count
- 3
- Number of Elements
- 1
- Number of Channels
- 1
- Power Dissipation-Max
- 490mW Ta
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 7.1 ns
- FET Type
- P-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 495m ? @ 800mA, 4.5V
- Vgs(th) (Max) @ Id
- 1.2V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 80pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 820mA Ta
- Gate Charge (Qg) (Max) @ Vgs
- 3nC @ 4.5V
- Rise Time
- 8ns
- Drain to Source Voltage (Vdss)
- 20V
- Drive Voltage (Max Rds On,Min Rds On)
- 1.5V 4.5V
- Vgs (Max)
- ±8V
- Fall Time (Typ)
- 18.5 ns
- Turn-Off Delay Time
- 31.7 ns
- Continuous Drain Current (ID)
- 820mA
- Gate to Source Voltage (Vgs)
- 8V
- Drain-source On Resistance-Max
- 0.495Ohm
- Drain to Source Breakdown Voltage
- -20V
- REACH SVHC
- No SVHC
- Radiation Hardening
- No
Download datasheets and manufacturer documentation for DIODES DMP21D0UFD-7.
Environmental Information:
PCN Assembly/Origin:
DMP21D0UFD-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 80pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 820mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.It is [31.7 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 7.1 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.5V 4.5V).
DMP21D0UFD-7 Features
a continuous drain current (ID) of 820mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 31.7 ns
a 20V drain to source voltage (Vdss)
DMP21D0UFD-7 Applications
There are a lot of Diodes Incorporated
DMP21D0UFD-7 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
User Guide
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