DIODES DMN32D2LFB4-7
Manufacturer No:
DMN32D2LFB4-7
Manufacturer:
DIODES
Package:
3-XFDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.2 ? @ 100mA, 4V ±10V 39pF @ 3V 3-XFDFN
Quantity:
In Stock :8792
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Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 5 - Sat, Jun 6, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
DMN32D2LFB4-7 Information
DIODES DMN32D2LFB4-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN32D2LFB4-7.
- Type
- Parameter
- Factory Lead Time
- 15 Weeks
- Contact Plating
- Gold
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 3-XFDFN
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2017
- Type
- Parameter
- JESD-609 Code
- e4
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 1.2Ohm
- Additional Feature
- HIGH RELIABILITY
- Subcategory
- FET General Purpose Powers
- Technology
- MOSFET (Metal Oxide)
Download datasheets and manufacturer documentation for DIODES DMN32D2LFB4-7.
Datasheets:
Environmental Information:
PCN Design/Specification:
DMN32D2LFB4-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 39pF @ 3V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 300mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 51 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 10V.By using drive voltage (1.8V 4V), this device helps reduce its overall power consumption.
DMN32D2LFB4-7 Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 51 ns
DMN32D2LFB4-7 Applications
There are a lot of Diodes Incorporated
DMN32D2LFB4-7 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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