DIODES ZVNL120GTA

Manufacturer No:

ZVNL120GTA

Manufacturer:

DIODES

Package:

TO-261-4, TO-261AA

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10 ? @ 250mA, 5V ±20V 85pF @ 25V TO-261-4, TO-261AA

Quantity:

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ZVNL120GTA information

DIODES ZVNL120GTA technical specifications, attributes, parameters and parts with similar specifications to DIODES ZVNL120GTA.

Type
Parameter

Factory Lead Time
17 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-261-4, TO-261AA

Number of Pins
4

Weight
7.994566mg

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2002

JESD-609 Code
e3

Pbfree Code
no

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

ECCN Code
EAR99

Resistance
10Ohm

Terminal Finish
Matte Tin (Sn)

Voltage - Rated DC
200V

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Current Rating
320mA

Pin Count
4

Number of Elements
1

Number of Channels
1

Power Dissipation-Max
2W Ta

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
2W

Case Connection
DRAIN

Turn On Delay Time
8 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
10 ? @ 250mA, 5V

Vgs(th) (Max) @ Id
1.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
85pF @ 25V

Current - Continuous Drain (Id) @ 25°C
320mA Ta

Rise Time
8ns

Drive Voltage (Max Rds On,Min Rds On)
3V 5V

Vgs (Max)
±20V

Fall Time (Typ)
12 ns

Turn-Off Delay Time
20 ns

Continuous Drain Current (ID)
320mA

Gate to Source Voltage (Vgs)
20V

Drain Current-Max (Abs) (ID)
0.32A

Download datasheets and manufacturer documentation for DIODES ZVNL120GTA.

Environmental Information:

diodesincorporated-desd5v0s1ba7-environmentalinformation-9032.pdf

ZVNL120GTA Overview

An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 85pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 320mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.32A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 2A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (3V 5V), this device contributes to a reduction in overall power consumption.

ZVNL120GTA Features

a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.

ZVNL120GTA Applications

There are a lot of Diodes Incorporated
ZVNL120GTA applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

User Guide

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