DIODES ZXTN25012EFHTA
Manufacturer No:
ZXTN25012EFHTA
Manufacturer:
DIODES
Package:
TO-236-3, SC-59, SOT-23-3
Description:
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
Quantity:
In Stock :8745
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Shipped from：HK Warehouse
Expected Shipping：Sun, Jun 14 - Mon, Jun 15, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
ZXTN25012EFHTA Information
DIODES ZXTN25012EFHTA technical specifications, attributes, parameters and parts with similar specifications to DIODES ZXTN25012EFHTA.
- Type
- Parameter
- Factory Lead Time
- 15 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Weight
- 7.994566mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2006
- Type
- Parameter
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Subcategory
- Other Transistors
- Max Power Dissipation
- 1.25W
- Terminal Position
- DUAL
Download datasheets and manufacturer documentation for DIODES ZXTN25012EFHTA.
Environmental Information:
PCN Assembly/Origin:
ZXTN25012EFHTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 500 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 190mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 6A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 260MHz in the part.Single BJT transistor can be broken down at a voltage of 12V volts.When collector current reaches its maximum, it can reach 6A volts.
ZXTN25012EFHTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 190mV @ 120mA, 6A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz
ZXTN25012EFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25012EFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
