DIODES ZXMN3A14FTA

Manufacturer No:

ZXMN3A14FTA

Manufacturer:

DIODES

Package:

TO-236-3, SC-59, SOT-23-3

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 65m ? @ 3.2A, 10V ±20V 448pF @ 15V 8.6nC @ 10V TO-236-3, SC-59, SOT-23-3

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In Stock :Available

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ZXMN3A14FTA information

DIODES ZXMN3A14FTA technical specifications, attributes, parameters and parts with similar specifications to DIODES ZXMN3A14FTA.

Type
Parameter

Factory Lead Time
17 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Number of Pins
3

Weight
7.994566mg

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2006

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Resistance
65mOhm

Terminal Finish
Matte Tin (Sn) - annealed

Additional Feature
LOW THRESHOLD

Subcategory
FET General Purpose Power

Voltage - Rated DC
30V

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Current Rating
3.5A

Time@Peak Reflow Temperature-Max (s)
40

Pin Count
3

Number of Elements
1

Number of Channels
1

Power Dissipation-Max
1W Ta

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1.5W

Turn On Delay Time
2.4 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
65m ? @ 3.2A, 10V

Vgs(th) (Max) @ Id
1V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
448pF @ 15V

Current - Continuous Drain (Id) @ 25°C
3.2A Ta

Gate Charge (Qg) (Max) @ Vgs
8.6nC @ 10V

Rise Time
2.5ns

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
5.3 ns

Turn-Off Delay Time
13.1 ns

Continuous Drain Current (ID)
3.9A

Download datasheets and manufacturer documentation for DIODES ZXMN3A14FTA.

Environmental Information:

diodesincorporated-desd5v0s1ba7-environmentalinformation-9032.pdf

ZXMN3A14FTA Overview

An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 448pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 13.1 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.4 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

ZXMN3A14FTA Features

a continuous drain current (ID) of 3.9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 13.1 ns

ZXMN3A14FTA Applications

There are a lot of Diodes Incorporated
ZXMN3A14FTA applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

User Guide

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