

DIODES ZVN4210GTA
Manufacturer No:
ZVN4210GTA
Manufacturer:
Package:
TO-261-4, TO-261AA
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 1.5 ? @ 1.5A, 10V ±20V 100pF @ 25V TO-261-4, TO-261AA
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ZVN4210GTA information
DIODES ZVN4210GTA technical specifications, attributes, parameters and parts with similar specifications to DIODES ZVN4210GTA.
- Type
- Parameter
- Factory Lead Time
- 17 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Number of Pins
- 4
- Weight
- 7.994566mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2006
- JESD-609 Code
- e3
- Pbfree Code
- no
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Resistance
- 1.8Ohm
- Terminal Finish
- Matte Tin (Sn)
- Voltage - Rated DC
- 100V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- 800mA
- Pin Count
- 4
- Number of Elements
- 1
- Number of Channels
- 1
- Power Dissipation-Max
- 2W Ta
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 2W
- Case Connection
- DRAIN
- Turn On Delay Time
- 4 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 1.5 ? @ 1.5A, 10V
- Vgs(th) (Max) @ Id
- 2.4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 800mA Ta
- Rise Time
- 8ns
- Drive Voltage (Max Rds On,Min Rds On)
- 5V 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 30 ns
- Turn-Off Delay Time
- 20 ns
- Continuous Drain Current (ID)
- 800mA
- Threshold Voltage
- 800mV
- Gate to Source Voltage (Vgs)
- 20V
Download datasheets and manufacturer documentation for DIODES ZVN4210GTA.
Datasheets:
Environmental Information:
ZVN4210GTA Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 800mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.8A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 6A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 800mV, which means that it will not activate any of its functions when its threshold voltage reaches 800mV.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
ZVN4210GTA Features
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 6A.
a threshold voltage of 800mV
ZVN4210GTA Applications
There are a lot of Diodes Incorporated
ZVN4210GTA applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
User Guide
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