Diodes DMP10H4D2S-7

Manufacturer No:

DMP10H4D2S-7

Manufacturer:

Diodes

Package:

TO-236-3, SC-59, SOT-23-3

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 4.2 ? @ 500mA, 10V ±20V 87pF @ 25V 1.8nC @ 10V 100V TO-236-3, SC-59, SOT-23-3

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DMP10H4D2S-7 information

Diodes DMP10H4D2S-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes DMP10H4D2S-7.

Type
Parameter

Factory Lead Time
17 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2015

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn)

Additional Feature
HIGH RELIABILITY

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

JESD-30 Code
R-PDSO-G3

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
380mW Ta

Operating Mode
ENHANCEMENT MODE

Power Dissipation
380mW

Turn On Delay Time
3.3 ns

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
4.2 ? @ 500mA, 10V

Vgs(th) (Max) @ Id
3V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
87pF @ 25V

Current - Continuous Drain (Id) @ 25°C
270mA Ta

Gate Charge (Qg) (Max) @ Vgs
1.8nC @ 10V

Drain to Source Voltage (Vdss)
100V

Drive Voltage (Max Rds On,Min Rds On)
4V 10V

Vgs (Max)
±20V

Turn-Off Delay Time
8.4 ns

Continuous Drain Current (ID)
-270mA

Gate to Source Voltage (Vgs)
20V

Drain Current-Max (Abs) (ID)
0.27A

Drain to Source Breakdown Voltage
-100V

Max Junction Temperature (Tj)
150°C

Height
1.1mm

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Diodes DMP10H4D2S-7.

DMP10H4D2S-7 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 87pF @ 25V.This device has a continuous drain current (ID) of [-270mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-100V, the drain-source breakdown voltage is -100V.A device's drain current is its maximum continuous current, and this device's drain current is 0.27A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 8.4 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 3.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4V 10V).

DMP10H4D2S-7 Features

a continuous drain current (ID) of -270mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 8.4 ns
a 100V drain to source voltage (Vdss)

DMP10H4D2S-7 Applications

There are a lot of Diodes Incorporated
DMP10H4D2S-7 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

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