DIODES MMBTA92-7-F
DIODES MMBTA92-7-F

DIODES MMBTA92-7-F

Manufacturer No:

MMBTA92-7-F

Manufacturer:

DIODES

Package:

TO-236-3, SC-59, SOT-23-3

Description:

PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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MMBTA92-7-F information

DIODES MMBTA92-7-F technical specifications, attributes, parameters and parts with similar specifications to DIODES MMBTA92-7-F.

  • Type
  • Parameter
  • Factory Lead Time
  • 19 Weeks
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-236-3, SC-59, SOT-23-3
  • Number of Pins
  • 3
  • Weight
  • 7.994566mg
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Series
  • Automotive, AEC-Q101
  • Published
  • 2000
  • JESD-609 Code
  • e3
  • Pbfree Code
  • yes
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Matte Tin (Sn)
  • Additional Feature
  • HIGH RELIABILITY
  • Subcategory
  • Other Transistors
  • Voltage - Rated DC
  • -300V
  • Max Power Dissipation
  • 300mW
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Current Rating
  • -500mA
  • Frequency
  • 50MHz
  • Time@Peak Reflow Temperature-Max (s)
  • 40
  • Base Part Number
  • MMBTA92
  • Pin Count
  • 3
  • Number of Elements
  • 1
  • Element Configuration
  • Single
  • Power Dissipation
  • 300mW
  • Transistor Application
  • SWITCHING
  • Gain Bandwidth Product
  • 50MHz
  • Polarity/Channel Type
  • PNP
  • Transistor Type
  • PNP
  • Collector Emitter Voltage (VCEO)
  • 300V
  • Max Collector Current
  • 500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 25 @ 30mA 10V
  • Current - Collector Cutoff (Max)
  • 250nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 500mV @ 2mA, 20mA
  • Collector Emitter Breakdown Voltage
  • 300V
  • Transition Frequency
  • 50MHz
  • Collector Emitter Saturation Voltage
  • -500mV
  • Max Breakdown Voltage
  • 300V
  • Collector Base Voltage (VCBO)
  • 300V
  • Emitter Base Voltage (VEBO)
  • -5V

Download datasheets and manufacturer documentation for DIODES MMBTA92-7-F.

Datasheets:

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MMBTA92-7-F Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 30mA 10V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -200mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 300V volts.When collector current reaches its maximum, it can reach 500mA volts.

MMBTA92-7-F Features


the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 50MHz


MMBTA92-7-F Applications


There are a lot of Diodes Incorporated
MMBTA92-7-F applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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Step2：Desiccant Protection

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Step3：Vacuum Packaging

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Step4：Individual Package

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Step5：Anti-collision Filling

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