DIODES ZXTN2010GTA
Manufacturer No:
ZXTN2010GTA
Manufacturer:
DIODES
Package:
TO-261-4, TO-261AA
Description:
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
Quantity:
In Stock :6934
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
ZXTN2010GTA Information
DIODES ZXTN2010GTA technical specifications, attributes, parameters and parts with similar specifications to DIODES ZXTN2010GTA.
- Type
- Parameter
- Factory Lead Time
- 15 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Number of Pins
- 4
- Weight
- 7.994566mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2006
- Type
- Parameter
- JESD-609 Code
- e3
- Pbfree Code
- no
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Voltage - Rated DC
- 60V
- Max Power Dissipation
- 3W
- Terminal Position
- DUAL
Download datasheets and manufacturer documentation for DIODES ZXTN2010GTA.
Environmental Information:
PCN Assembly/Origin:
ZXTN2010GTA Overview
DC current gain in this device equals 100 @ 2A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 300mA, 6A.Single BJT transistor is essential to maintain the continuous collector voltage at 6A to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 6A current rating.As a result, the part has a transition frequency of 130MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 6A volts.
ZXTN2010GTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 260mV @ 300mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 130MHz
ZXTN2010GTA Applications
There are a lot of Diodes Incorporated
ZXTN2010GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
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