ST STP8NM60FP
Manufacturer No:
STP8NM60FP
Manufacturer:
ST
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Tube 1 ? @ 2.5A, 10V ±30V 400pF @ 25V 18nC @ 10V TO-220-3 Full Pack
Quantity:
In Stock :7009
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STP8NM60FP Information
ST STP8NM60FP technical specifications, attributes, parameters and parts with similar specifications to ST STP8NM60FP.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- MDmesh?
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Type
- Parameter
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 1Ohm
- Terminal Finish
- Matte Tin (Sn) - annealed
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 650V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 8A
Download datasheets and manufacturer documentation for ST STP8NM60FP.
Datasheets:
STP8NM60FP Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 200 mJ.A device's maximal input capacitance is 400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 8A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 23 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
STP8NM60FP Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23 ns
STP8NM60FP Applications
There are a lot of STMicroelectronics
STP8NM60FP applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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