ST STL160N3LLH6

Manufacturer No:

STL160N3LLH6

Manufacturer:

ST

Package:

8-PowerVDFN

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.3m ? @ 17.5A, 10V ±20V 6375pF @ 25V 61.5nC @ 4.5V 8-PowerVDFN

Quantity:

In Stock :4474

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STL160N3LLH6 Information

ST STL160N3LLH6 technical specifications, attributes, parameters and parts with similar specifications to ST STL160N3LLH6.

Type
Parameter

Factory Lead Time
20 Weeks

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)

Package / Case
8-PowerVDFN

Mounting Type
Surface Mount

Mount
Surface Mount

Number of Pins
5

Transistor Element Material
SILICON

Series
DeepGATE?, STripFET? VI

Packaging
Tape & Reel (TR)

Operating Temperature
-55°C~175°C TJ

Type
Parameter

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
5

ECCN Code
EAR99

Resistance
1.3MOhm

Additional Feature
ULTRA-LOW RESISTANCE

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Base Part Number
STL160

Download datasheets and manufacturer documentation for ST STL160N3LLH6.

Datasheets:

stmicroelectronics-stl160n3llh6-datasheets-1571.pdf

stmicroelectronics-stl160n3llh6-datasheets-2275.pdf

stmicroelectronics-stl160n3llh6-datasheets-2276.pdf

STL160N3LLH6 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 900 mJ.A device's maximal input capacitance is 6375pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 160A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 107.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

STL160N3LLH6 Features

the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 107.5 ns
a threshold voltage of 1V