

INFINEON SMBT2907AE6327HTSA1
Manufacturer No:
SMBT2907AE6327HTSA1
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
PNP 150°C TJ 10nA ICBO 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
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SMBT2907AE6327HTSA1 information
INFINEON SMBT2907AE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON SMBT2907AE6327HTSA1.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Collector-Emitter Breakdown Voltage
- 60V
- Number of Elements
- 1
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2006
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Last Time Buy
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Voltage - Rated DC
- -60V
- Max Power Dissipation
- 330mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Current Rating
- -600mA
- Frequency
- 200MHz
- Configuration
- SINGLE
- Power Dissipation
- 330mW
- Transistor Application
- SWITCHING
- Halogen Free
- Not Halogen Free
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 10V
- Max Collector Current
- 600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 150mA 10V
- Current - Collector Cutoff (Max)
- 10nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 1.6V @ 50mA, 500mA
- Transition Frequency
- 200MHz
- Max Breakdown Voltage
- 60V
- Collector Base Voltage (VCBO)
- 60V
- Emitter Base Voltage (VEBO)
- 5V
- Turn On Time-Max (ton)
- 50ns
- REACH SVHC
- No SVHC
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for INFINEON SMBT2907AE6327HTSA1.
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SMBT2907AE6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
SMBT2907AE6327HTSA1 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
SMBT2907AE6327HTSA1 Applications
There are a lot of Infineon Technologies
SMBT2907AE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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