Vishay SI1012CR-T1-GE3

Manufacturer No:

SI1012CR-T1-GE3

Manufacturer:

Vishay

Package:

SC-75, SOT-416

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 396m ? @ 600mA, 4.5V ±8V 43pF @ 10V 2nC @ 8V SC-75, SOT-416

Quantity:

Delivery:

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In Stock :Available

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SI1012CR-T1-GE3 information

Vishay SI1012CR-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI1012CR-T1-GE3.

Type
Parameter

Factory Lead Time
14 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
SC-75, SOT-416

Number of Pins
3

Weight
2.012816mg

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
TrenchFET®

Published
2013

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Resistance
396mOhm

Terminal Finish
Matte Tin (Sn)

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Pin Count
3

Number of Elements
1

Power Dissipation-Max
240mW Ta

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
240mW

Turn On Delay Time
11 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
396m ? @ 600mA, 4.5V

Vgs(th) (Max) @ Id
1V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
43pF @ 10V

Gate Charge (Qg) (Max) @ Vgs
2nC @ 8V

Rise Time
16ns

Drive Voltage (Max Rds On,Min Rds On)
1.5V 4.5V

Vgs (Max)
±8V

Fall Time (Typ)
11 ns

Turn-Off Delay Time
26 ns

Continuous Drain Current (ID)
630mA

Threshold Voltage
400mV

Gate to Source Voltage (Vgs)
8V

Drain to Source Breakdown Voltage
20V

Max Junction Temperature (Tj)
150°C

Height
800?m

Length
1.68mm

Download datasheets and manufacturer documentation for Vishay SI1012CR-T1-GE3.

Datasheets:

vishaysiliconix-si1012crt1ge3-datasheets-5114.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

SI1012CR-T1-GE3 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 43pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 630mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 400mV threshold voltage. By using drive voltage (1.5V 4.5V), this device helps reduce its overall power consumption.

SI1012CR-T1-GE3 Features

a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26 ns
a threshold voltage of 400mV

SI1012CR-T1-GE3 Applications

There are a lot of Vishay Siliconix
SI1012CR-T1-GE3 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

User Guide

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.