ST SCT10N120

Manufacturer No:

SCT10N120

Manufacturer:

ST

Package:

TO-247-3

Description:

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

Quantity:

In Stock :3730

Looking for price or availability? Send us an RFQ and our sales team will respond quickly.

Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

Payment

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Authenticity Guarantee

All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.

Quality Assurance

Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.

User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.

RFQ (REQUEST FOR QUOTATIONS)

Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SCT10N120 Information

ST SCT10N120 technical specifications, attributes, parameters and parts with similar specifications to ST SCT10N120.

Type
Parameter

RoHS Status
RoHS Compliant

Part Life Cycle Code
Active

Ihs Manufacturer
STMICROELECTRONICS

Manufacturer Package Code
HiP247 IN LINE

Reach Compliance Code
compliant

ECCN Code
EAR99

Factory Lead Time
32 Weeks

Samacsys Manufacturer
STMicroelectronics

Case Connection
DRAIN

Configuration
SINGLE WITH BUILT-IN DIODE

Type
Parameter

DS Breakdown Voltage-Min
1200 V

Drain Current-Max (ID)
12 A

Drain-source On Resistance-Max
0.69 Ω

FET Technology
METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)
9 pF

JESD-30 Code
R-PSFM-T3

Number of Elements
1

Number of Terminals
3

Operating Mode
ENHANCEMENT MODE

Operating Temperature-Max
200 °C

Download datasheets and manufacturer documentation for ST SCT10N120.

Datasheets:

en.DM00170798.pdf

SCT10N120 Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device??s housing in the proprietary HiP247? package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.