ROHM RS6G120BGTB1

Manufacturer No:

RS6G120BGTB1

Manufacturer:

ROHM

Package:

8-PowerTDFN

Description:

MOSFET (Metal Oxide) N-Channel 1.34mOhm @ 90A, 10V ±20V 4240 pF @ 20 V 67 nC @ 10 V 40 V 8-PowerTDFN

Quantity:

In Stock :8431

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

RS6G120BGTB1 Information

ROHM RS6G120BGTB1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RS6G120BGTB1.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-PowerTDFN

Supplier Device Package
8-HSOP

Mfr
Rohm Semiconductor

Package
Digi-Reel?

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

Power Dissipation (Max)
104W (Ta)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
1.34mOhm @ 90A, 10V

Vgs(th) (Max) @ Id
2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
4240 pF @ 20 V

Current - Continuous Drain (Id) @ 25°C
120A (Ta)

Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V

Drain to Source Voltage (Vdss)
40 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM RS6G120BGTB1.

RS6G120BGTB1 Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4240 pF @ 20 V.The transistor must receive a 40 V drain to source voltage (Vdss) in order to function.