ROHM RS3E075ATTB
Manufacturer No:
RS3E075ATTB
Manufacturer:
ROHM
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 23.5m ? @ 7.5A, 10V ±20V 1250pF @ 15V 25nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :8325
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RS3E075ATTB Information
ROHM RS3E075ATTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RS3E075ATTB.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2014
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Resistance
- 18mOhm
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for ROHM RS3E075ATTB.
Datasheets:
RS3E075ATTB Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 4.2 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1250pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -7.5A continuous drain current (ID).Peak drain current is 30A, which is the maximum pulsed drain current.In this case, the threshold voltage of the transistor is -2.5V, which means that it will not activate any of its functions when its threshold voltage reaches -2.5V.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
RS3E075ATTB Features
the avalanche energy rating (Eas) is 4.2 mJ
a continuous drain current (ID) of -7.5A
based on its rated peak drain current 30A.
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)
RS3E075ATTB Applications
There are a lot of ROHM Semiconductor
RS3E075ATTB applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
