NXP PSMN8R5-108ESQ

Manufacturer No:

PSMN8R5-108ESQ

Manufacturer:

NXP

Package:

TO-262-3 Long Leads, I2Pak, TO-262AA

Description:

MOSFET (Metal Oxide) N-Channel Tube 8.5m ? @ 25A, 10V ±20V 5512pF @ 50V 111nC @ 10V 108V TO-262-3 Long Leads, I2Pak, TO-262AA

Quantity:

In Stock :3413

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Expected Shipping：Mon, Jun 15 - Tue, Jun 16, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

PSMN8R5-108ESQ Information

NXP PSMN8R5-108ESQ technical specifications, attributes, parameters and parts with similar specifications to NXP PSMN8R5-108ESQ.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA

Surface Mount
NO

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Published
2014

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Type
Parameter

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Pin Count
3

Reference Standard
IEC-60134

JESD-30 Code
R-PSIP-T3

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
263W Tc

Operating Mode
ENHANCEMENT MODE

Download datasheets and manufacturer documentation for NXP PSMN8R5-108ESQ.

PSMN8R5-108ESQ Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 219 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5512pF @ 50V maximal input capacitance.A device can conduct a maximum continuous current of [100A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 429A.The DS breakdown voltage should be maintained above 108V to maintain normal operation.To operate this transistor, you will need a 108V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).