NEXPERIA PSMN3R3-40YS,115

Manufacturer No:

PSMN3R3-40YS,115

Manufacturer:

NEXPERIA

Package:

SC-100, SOT-669

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.3m ? @ 25A, 10V ±20V 2754pF @ 20V 49nC @ 10V SC-100, SOT-669

Quantity:

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Payment:

In Stock :Available

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PSMN3R3-40YS,115 information

NEXPERIA PSMN3R3-40YS,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN3R3-40YS,115.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
SC-100, SOT-669

Surface Mount
YES

Number of Pins
4

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Published
2010

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

Resistance
4.5MOhm

Terminal Finish
Tin (Sn)

Technology
MOSFET (Metal Oxide)

Terminal Form
GULL WING

Pin Count
4

Number of Elements
1

Power Dissipation-Max
117W Tc

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
117W

Case Connection
DRAIN

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
3.3m ? @ 25A, 10V

Vgs(th) (Max) @ Id
4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
2754pF @ 20V

Current - Continuous Drain (Id) @ 25°C
100A Tc

Gate Charge (Qg) (Max) @ Vgs
49nC @ 10V

Rise Time
21ns

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

Fall Time (Typ)
14 ns

Turn-Off Delay Time
38 ns

Continuous Drain Current (ID)
100A

JEDEC-95 Code
MO-235

Gate to Source Voltage (Vgs)
20V

Max Dual Supply Voltage
40V

Drain to Source Breakdown Voltage
40V

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for NEXPERIA PSMN3R3-40YS,115.

PSMN3R3-40YS,115 Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2754pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 21 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 40V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).

PSMN3R3-40YS,115 Features

a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 38 ns

PSMN3R3-40YS,115 Applications

There are a lot of Nexperia USA Inc.
PSMN3R3-40YS,115 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

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