VISHAY IRFI740G
Manufacturer No:
IRFI740G
Manufacturer:
Package:
TO-220-3 Full Pack, Isolated Tab
Description:
MOSFET (Metal Oxide) N-Channel Tube 550mOhm @ 3.2A, 10V ±20V 1370pF @ 25V 66nC @ 10V 400V TO-220-3 Full Pack, Isolated Tab
Quantity:
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IRFI740G Information
VISHAY IRFI740G technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFI740G.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Number of Pins
- 3
- Supplier Device Package
- TO-220-3
- Weight
- 6.000006g
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2014
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Number of Elements
- 1
- Number of Channels
- 1
- Power Dissipation-Max
- 40W Tc
- Element Configuration
- Single
- Power Dissipation
- 40W
- Turn On Delay Time
- 14 ns
Download datasheets and manufacturer documentation for VISHAY IRFI740G.
Datasheets:
RohsStatement:
IRFI740G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1370pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5.4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=400V. And this device has 400V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 54 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 550mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFI740G Features
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 54 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)
IRFI740G Applications
There are a lot of Vishay Siliconix
IRFI740G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
IRFI740G Relevant information
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