

INFINEON IRFB4110GPBF
Manufacturer No:
IRFB4110GPBF
Manufacturer:
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 4.5m ? @ 75A, 10V ±20V 9620pF @ 50V 210nC @ 10V TO-220-3
Quantity:


In Stock :2684
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IRFB4110GPBF Information
INFINEON IRFB4110GPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFB4110GPBF.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2007
- Type
- Parameter
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Qualification Status
- Not Qualified
- Number of Elements
- 1
Download datasheets and manufacturer documentation for INFINEON IRFB4110GPBF.
Datasheets:
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IRFB4110GPBF Description
IRFB4110GPBF is an N-channel power MOSFET transistor from the manufacturer of Infineon Technologies with a voltage of 100V. The operating temperature of IRFB4110GPBF is -55°C~175°C TJ and its maximum power dissipation are 370W. IRFB4110GPBF has 3 pins and it is available in TO-220-3 packaging way. The FET Type of IRFP7430PBF is P-Channel and its Rise Time is 67ns.
IRFB4110GPBF Features
Improved Gate, Avalanche, and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Halogen-Free
IRFB4110GPBF Applications
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
IRFB4110GPBF Relevant information
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