

Renesas HAT1072H-EL-E
Manufacturer No:
HAT1072H-EL-E
Manufacturer:
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 4.5m ? @ 20A, 10V +10V, -20V 9500pF @ 10V 155nC @ 10V 30V SC-100, SOT-669
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HAT1072H-EL-E information
Renesas HAT1072H-EL-E technical specifications, attributes, parameters and parts with similar specifications to Renesas HAT1072H-EL-E.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Number of Pins
- 5
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2005
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Pin Count
- 5
- JESD-30 Code
- R-PSSO-G4
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 30W Tc
- Power Dissipation
- 30W
- Case Connection
- DRAIN
- Turn On Delay Time
- 28 ns
- FET Type
- P-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 4.5m ? @ 20A, 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 9500pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 40A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 155nC @ 10V
- Rise Time
- 60ns
- Drain to Source Voltage (Vdss)
- 30V
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- +10V, -20V
- Fall Time (Typ)
- 140 ns
- Turn-Off Delay Time
- 305 ns
- Continuous Drain Current (ID)
- 40A
- Gate to Source Voltage (Vgs)
- 10V
- Drain-source On Resistance-Max
- 0.0077Ohm
- DS Breakdown Voltage-Min
- 30V
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for Renesas HAT1072H-EL-E.
Datasheets:
ConflictMineralStatement:
HAT1072H-EL-E Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9500pF @ 10V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 305 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 28 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
HAT1072H-EL-E Features
a continuous drain current (ID) of 40A
the turn-off delay time is 305 ns
a 30V drain to source voltage (Vdss)
HAT1072H-EL-E Applications
There are a lot of Renesas Electronics America
HAT1072H-EL-E applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
User Guide
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