ONSEMI FDD6796
Manufacturer No:
FDD6796
Manufacturer:
ONSEMI
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5.7m ? @ 20A, 10V ±20V 2315pF @ 13V 41nC @ 10V 25V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :1471
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 8 - Tue, Jun 9, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDD6796 Information
ONSEMI FDD6796 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDD6796.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- PowerTrench®
- Published
- 2006
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- HTS Code
- 8541.29.00.95
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for ONSEMI FDD6796.
Datasheets:
FDD6796 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 40 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2315pF @ 13V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 67A.Peak drain current is 150A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 25V.For this transistor to work, a voltage 25V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
FDD6796 Features
the avalanche energy rating (Eas) is 40 mJ
based on its rated peak drain current 150A.
a 25V drain to source voltage (Vdss)
FDD6796 Applications
There are a lot of ON Semiconductor
FDD6796 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
15,000+
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