ONSEMI FDI2532
Manufacturer No:
FDI2532
Manufacturer:
ONSEMI
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 16mOhm @ 33A, 10V ±20V 5870pF @ 25V 107nC @ 10V 150V TO-262-3 Long Leads, I2Pak, TO-262AA
Quantity:
In Stock :3822
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 12 - Sat, Jun 13, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDI2532 Information
ONSEMI FDI2532 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDI2532.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Supplier Device Package
- I2PAK (TO-262)
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- PowerTrench®
- Published
- 2002
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- Power Dissipation-Max
- 310W Tc
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 16mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 5870pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 8A Ta 79A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 107nC @ 10V
- Drain to Source Voltage (Vdss)
- 150V
- Drive Voltage (Max Rds On,Min Rds On)
- 6V 10V
- Vgs (Max)
- ±20V
Download datasheets and manufacturer documentation for ONSEMI FDI2532.
Datasheets:
FDI2532 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5870pF @ 25V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (6V 10V).
FDI2532 Features
a 150V drain to source voltage (Vdss)
FDI2532 Applications
There are a lot of ON Semiconductor
FDI2532 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
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