DIODES DMTH47M2LPSW-13

Manufacturer No:

DMTH47M2LPSW-13

Manufacturer:

DIODES

Package:

8-PowerTDFN

Description:

MOSFET (Metal Oxide) N-Channel 7.3mOhm @ 20A, 10V ±20V 891 pF @ 20 V 14 nC @ 10 V 40 V 8-PowerTDFN

Quantity:

In Stock :4857

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Wed, Jun 3 - Thu, Jun 4, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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Step2：Desiccant Protection

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Step4：Individual Package

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMTH47M2LPSW-13 Information

DIODES DMTH47M2LPSW-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMTH47M2LPSW-13.

Type
Parameter

Mounting Type
Surface Mount, Wettable Flank

Package / Case
8-PowerTDFN

Supplier Device Package
PowerDI5060-8 (Type UX)

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

Power Dissipation (Max)
3.8W (Ta), 68W (Tc)

Operating Temperature
-55°C ~ 175°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
7.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id
2.3V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
891 pF @ 20 V

Current - Continuous Drain (Id) @ 25°C
73A (Tc)

Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V

Drain to Source Voltage (Vdss)
40 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for DIODES DMTH47M2LPSW-13.

DMTH47M2LPSW-13 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 891 pF @ 20 V.In order to operate this transistor, a voltage of 40 V is needed from the drain to the source (Vdss).