

DIODES BC857B-7-F
Manufacturer No:
BC857B-7-F
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
PNP -65°C~150°C TJ 15nA 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
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BC857B-7-F information
DIODES BC857B-7-F technical specifications, attributes, parameters and parts with similar specifications to DIODES BC857B-7-F.
- Type
- Parameter
- Factory Lead Time
- 19 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Weight
- 7.994566mg
- Transistor Element Material
- SILICON
- Collector-Emitter Breakdown Voltage
- -45V
- Current-Collector (Ic) (Max)
- 100mA
- Number of Elements
- 1
- hFEMin
- 220
- Operating Temperature
- -65°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2008
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Max Power Dissipation
- 300mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Frequency
- 200MHz
- Time@Peak Reflow Temperature-Max (s)
- 40
- Base Part Number
- BC857B
- Pin Count
- 3
- Element Configuration
- Single
- Power Dissipation
- 310mW
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 200MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- -45V
- Max Collector Current
- -100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 220 @ 2mA 5V
- Current - Collector Cutoff (Max)
- 15nA
- Vce Saturation (Max) @ Ib, Ic
- 650mV @ 5mA, 100mA
- Transition Frequency
- 200MHz
- Max Breakdown Voltage
- 45V
- Collector Base Voltage (VCBO)
- -50V
- Emitter Base Voltage (VEBO)
- -5V
- Max Junction Temperature (Tj)
- 150°C
- Height
- 1.1mm
- Length
- 3.05mm
- Width
- 1.4mm
Download datasheets and manufacturer documentation for DIODES BC857B-7-F.
Datasheets:
Environmental Information:
BC857B-7-F Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 200MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of -100mA volts is possible.
BC857B-7-F Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
BC857B-7-F Applications
There are a lot of Diodes Incorporated
BC857B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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BC857B-7-F Relevant information
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