DIODES DMN3016LFDFQ-13

Manufacturer No:

DMN3016LFDFQ-13

Manufacturer:

DIODES

Package:

6-UDFN Exposed Pad

Description:

MOSFET (Metal Oxide) N-Channel 12mOhm @ 11A, 10V ±20V 1415 pF @ 15 V 25.1 nC @ 10 V 30 V 6-UDFN Exposed Pad

Quantity:

In Stock :1784

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

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MEANS OF PAYMENT

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMN3016LFDFQ-13 Information

DIODES DMN3016LFDFQ-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN3016LFDFQ-13.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
6-UDFN Exposed Pad

Supplier Device Package
U-DFN2020-6 (Type F)

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

Power Dissipation (Max)
730mW (Ta)

Series
Automotive, AEC-Q101

Operating Temperature
-55°C ~ 150°C (TJ)

Type
Parameter

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
12mOhm @ 11A, 10V

Vgs(th) (Max) @ Id
2V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
1415 pF @ 15 V

Current - Continuous Drain (Id) @ 25°C
10A (Ta)

Gate Charge (Qg) (Max) @ Vgs
25.1 nC @ 10 V

Drain to Source Voltage (Vdss)
30 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for DIODES DMN3016LFDFQ-13.

DMN3016LFDFQ-13 Overview

A device's maximum input capacitance is 1415 pF @ 15 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 30 V drain to source voltage (Vdss).