DIODES DMN21D2UFB-7B

Manufacturer No:

DMN21D2UFB-7B

Manufacturer:

DIODES

Package:

3-UFDFN

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 990m ? @ 100mA, 4.5V ±12V 27.6pF @ 16V 0.93nC @ 10V 20V 3-UFDFN

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DMN21D2UFB-7B information

DIODES DMN21D2UFB-7B technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN21D2UFB-7B.

Type
Parameter

Factory Lead Time
15 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
3-UFDFN

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2012

JESD-609 Code
e4

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)

Additional Feature
HIGH RELIABILITY

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
BOTTOM

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
40

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
380mW Ta

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

Turn On Delay Time
3.5 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
990m ? @ 100mA, 4.5V

Vgs(th) (Max) @ Id
1V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
27.6pF @ 16V

Current - Continuous Drain (Id) @ 25°C
760mA Ta

Gate Charge (Qg) (Max) @ Vgs
0.93nC @ 10V

Rise Time
4.2ns

Drain to Source Voltage (Vdss)
20V

Drive Voltage (Max Rds On,Min Rds On)
1.5V 4.5V

Vgs (Max)
±12V

Fall Time (Typ)
9.8 ns

Turn-Off Delay Time
19.6 ns

Continuous Drain Current (ID)
760mA

Gate to Source Voltage (Vgs)
12V

Drain Current-Max (Abs) (ID)
0.76A

Drain-source On Resistance-Max
0.99Ohm

DS Breakdown Voltage-Min
20V

Height
480?m

Download datasheets and manufacturer documentation for DIODES DMN21D2UFB-7B.

Environmental Information:

diodesincorporated-desd5v0s1ba7-environmentalinformation-9032.pdf

DMN21D2UFB-7B Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 27.6pF @ 16V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 760mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.76A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 19.6 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 3.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 20V in order to maintain normal operation.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.5V 4.5V), this device helps reduce its overall power consumption.

DMN21D2UFB-7B Features

a continuous drain current (ID) of 760mA
the turn-off delay time is 19.6 ns
a 20V drain to source voltage (Vdss)

DMN21D2UFB-7B Applications

There are a lot of Diodes Incorporated
DMN21D2UFB-7B applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

User Guide

PURCHASE

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.