

TI CSD87313DMS
Manufacturer No:
CSD87313DMS
Manufacturer:
Package:
SMALL OUTLINE, S-PDSO-N6
Description:
30-V, N channel NexFET™ power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm 8-WSON -55 to 150
Quantity:


In Stock :4551
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CSD87313DMS Information
TI CSD87313DMS technical specifications, attributes, parameters and parts with similar specifications to TI CSD87313DMS.
- Type
- Parameter
- Pbfree Code
- Yes
- RoHS Status
- Non-RoHS Compliant
- Part Life Cycle Code
- Active
- Ihs Manufacturer
- TEXAS INSTRUMENTS INC
- Package Description
- SMALL OUTLINE, S-PDSO-N6
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- HTS Code
- 8541.29.00.95
- Samacsys Manufacturer
- Texas Instruments
- Additional Feature
- AVALANCHE RATED
- Type
- Parameter
- Avalanche Energy Rating (Eas)
- 67 mJ
- Case Connection
- SOURCE
- Configuration
- COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 30 V
- Drain Current-Max (ID)
- 17 A
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- Feedback Cap-Max (Crss)
- 200 pF
- JESD-30 Code
- S-PDSO-N6
- JESD-609 Code
- e3
- Moisture Sensitivity Level
- 1
Download datasheets and manufacturer documentation for TI CSD87313DMS.
CSD87313DMS Description
The CSD87313DMS is a 30 V common-drain dual N-channel device designed for USB Type-C/PD and battery protection. The SON 3.3mm ?á 3.3mm device features a low source on-resistance to minimize loss and provide a low number of components for space-constrained applications.
CSD87313DMS Features
1? Low-Source-to-Source On Resistance
? Dual Common Drain N-Channel MOSFETs
? Optimized for 5-V Gate Drive
? Low Qg and Qgd
? Low-Thermal Resistance
? Avalanche Rated
? Lead-Free Terminal Plating
? RoHS Compliant
? Halogen Free
? SON 3.3-mm ?á 3.3-mm Plastic Package
CSD87313DMS Applications
? USB Type-C? and Power Delivery (PD) VBus
Protection
? Battery Protection
? Load Switch
CSD87313DMS Relevant information
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