

NEXPERIA BUK9Y3R0-40E,115
Manufacturer No:
BUK9Y3R0-40E,115
Manufacturer:
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.5m ? @ 25A, 10V ±10V 5962pF @ 25V 35.5nC @ 5V SC-100, SOT-669
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BUK9Y3R0-40E,115 information
NEXPERIA BUK9Y3R0-40E,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BUK9Y3R0-40E,115.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Contact Plating
- Tin
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Surface Mount
- YES
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101, TrenchMOS?
- Published
- 2014
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- Additional Feature
- AVALANCHE RATED
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Reach Compliance Code
- not_compliant
- Pin Count
- 4
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Number of Channels
- 1
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- DRAIN
- Turn On Delay Time
- 24 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 2.5m ? @ 25A, 10V
- Vgs(th) (Max) @ Id
- 2.1V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 5962pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 100A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 35.5nC @ 5V
- Rise Time
- 44ns
- Drive Voltage (Max Rds On,Min Rds On)
- 5V
- Vgs (Max)
- ±10V
- Fall Time (Typ)
- 34 ns
- Turn-Off Delay Time
- 53 ns
- Continuous Drain Current (ID)
- 100A
- JEDEC-95 Code
- MO-235
- Gate to Source Voltage (Vgs)
- 10V
- Max Dual Supply Voltage
- 40V
- Drain-source On Resistance-Max
- 0.003Ohm
- Drain to Source Breakdown Voltage
- 40V
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for NEXPERIA BUK9Y3R0-40E,115.
PCN Packaging:
RohsStatement:
BUK9Y3R0-40E,115 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5962pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100A.With a drain-source breakdown voltage of 40V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 40V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 53 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 24 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 40V.Using drive voltage (5V) reduces this device's overall power consumption.
BUK9Y3R0-40E,115 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 53 ns
BUK9Y3R0-40E,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y3R0-40E,115 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
User Guide
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