

NEXPERIA PBSS5250T,215
Manufacturer No:
PBSS5250T,215
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
PNP 150°C TJ 100nA ICBO 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
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PBSS5250T,215 information
NEXPERIA PBSS5250T,215 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PBSS5250T,215.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Collector-Emitter Breakdown Voltage
- 50V
- Number of Elements
- 1
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2009
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Max Power Dissipation
- 480mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Frequency
- 100MHz
- Time@Peak Reflow Temperature-Max (s)
- 40
- Base Part Number
- PBSS5250
- Element Configuration
- Single
- Power Dissipation
- 480mW
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 100MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 50V
- Max Collector Current
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 1A 2V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 100mA, 2A
- Transition Frequency
- 100MHz
- Max Breakdown Voltage
- 50V
- Collector Base Voltage (VCBO)
- 50V
- Emitter Base Voltage (VEBO)
- 5V
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for NEXPERIA PBSS5250T,215.
Datasheets:
PCN Design/Specification:
PCN Packaging:
RohsStatement:
PBSS5250T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 100mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS5250T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 300mV @ 100mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5250T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5250T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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