NEXPERIA PBHV8115T-QR

Manufacturer No:

PBHV8115T-QR

Manufacturer:

NEXPERIA

Package:

SOT-23-3

Description:

NPN 150°C (TJ) 100nA SOT-23-3 MouseReel Surface Mount

Quantity:

In Stock :3172

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Shipped from：HK Warehouse

Expected Shipping：Sun, Jun 7 - Mon, Jun 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

PBHV8115T-QR Information

NEXPERIA PBHV8115T-QR technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PBHV8115T-QR.

Type
Parameter

Package / Case
SOT-23-3

Mounting Type
Surface Mount

Supplier Device Package
TO-236AB

Mounting Style
SMD/SMT

RoHS Status

Transistor Polarity
NPN

Minimum Operating Temperature
- 55 C

Maximum Operating Temperature
+ 150 C

Package
Tape & Reel (TR)

Mfr
Nexperia USA Inc.

Type
Parameter

Product Status
Active

Packaging
MouseReel

Operating Temperature
150°C (TJ)

Series
Automotive, AEC-Q101

Configuration
Single

Power Dissipation
300mW

Power - Max
300 mW

Transistor Type
NPN

DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA, 10V

Current - Collector Cutoff (Max)
100nA

Download datasheets and manufacturer documentation for NEXPERIA PBHV8115T-QR.

PBHV8115T-QR Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA, 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 200mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at 1 A in order to achieve high efficiency.The part has a transition frequency of 30MHz.This product comes in a TO-236AB device package from the supplier.Device displays Collector Emitter Breakdown (150 V maximal voltage).

PBHV8115T-QR Features

the DC current gain for this device is 100 @ 100mA, 10V
the vce saturation(Max) is 350mV @ 200mA, 1A
a transition frequency of 30MHz
the supplier device package of TO-236AB