

NEXPERIA BUK9Y19-55B,115
Manufacturer No:
BUK9Y19-55B,115
Manufacturer:
Package:
SC-100, SOT-669
Description:
N-Channel Tape & Reel (TR) 17.3m Ω @ 20A, 10V ±15V 1992pF @ 25V 18nC @ 5V SC-100, SOT-669
Quantity:
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BUK9Y19-55B,115 Information
NEXPERIA BUK9Y19-55B,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BUK9Y19-55B,115.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Contact Plating
- Tin
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Surface Mount
- YES
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 46A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Number of Elements
- 1
- Type
- Parameter
- Power Dissipation (Max)
- 85W Tc
- Turn Off Delay Time
- 44 ns
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101, TrenchMOS™
- Published
- 2008
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
Download datasheets and manufacturer documentation for NEXPERIA BUK9Y19-55B,115.
Datasheets:
PCN Packaging:
RohsStatement:
BUK9Y19-55B,115 Overview
An avalanche break down occurs, and the applied energy is called avalanche energy, with a rating of 80 mJ Avalanche energy.An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1992pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 46A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 15V to 1.In addition to 55V, it supports dual voltages up to the maximum.
BUK9Y19-55B,115 Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 55V voltage
BUK9Y19-55B,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y19-55B,115 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
BUK9Y19-55B,115 Relevant information
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