NEXPERIA BSP250,135

Manufacturer No:

BSP250,135

Manufacturer:

NEXPERIA

Package:

TO-261-4, TO-261AA

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 250m ? @ 1A, 10V ±20V 250pF @ 20V 25nC @ 10V TO-261-4, TO-261AA

Quantity:

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Payment:

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BSP250,135 information

NEXPERIA BSP250,135 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BSP250,135.

Type
Parameter

Factory Lead Time
4 Weeks

Contact Plating
Tin

Mounting Type
Surface Mount

Package / Case
TO-261-4, TO-261AA

Surface Mount
YES

Number of Pins
4

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Published
1998

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

ECCN Code
EAR99

Resistance
250mOhm

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
30

Pin Count
4

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1.65W

Case Connection
DRAIN

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
250m ? @ 1A, 10V

Vgs(th) (Max) @ Id
2.8V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
250pF @ 20V

Current - Continuous Drain (Id) @ 25°C
3A Tc

Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

Continuous Drain Current (ID)
3A

Gate to Source Voltage (Vgs)
20V

Max Dual Supply Voltage
-30V

Drain Current-Max (Abs) (ID)
3A

Drain to Source Breakdown Voltage
30V

Pulsed Drain Current-Max (IDM)
12A

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for NEXPERIA BSP250,135.

BSP250,135 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 250pF @ 20V.This device conducts a continuous drain current (ID) of 3A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 3A.Pulsed drain current is maximum rated peak drain current 12A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With -30V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

BSP250,135 Features

a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 30V voltage
based on its rated peak drain current 12A.

BSP250,135 Applications

There are a lot of Nexperia USA Inc.
BSP250,135 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

User Guide

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