NEXPERIA BSP110,115
NEXPERIA BSP110,115

NEXPERIA BSP110,115

Manufacturer No:

BSP110,115

Manufacturer:

NEXPERIA

Package:

TO-261-4, TO-261AA

Description:

N-Channel Tape & Reel (TR) 10 Ω @ 150mA, 5V ±20V 40pF @ 10V TO-261-4, TO-261AA

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

Price not displayed? Please send an RFQ, and we will respond immediately.

BSP110,115 information

NEXPERIA BSP110,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BSP110,115.

  • Type
  • Parameter
  • Contact Plating
  • Tin
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-261-4, TO-261AA
  • Surface Mount
  • YES
  • Number of Pins
  • 3
  • Weight
  • 4.535924g
  • Transistor Element Material
  • SILICON
  • Current - Continuous Drain (Id) @ 25℃
  • 520mA Tc
  • Drive Voltage (Max Rds On, Min Rds On)
  • 5V
  • Number of Elements
  • 1
  • Power Dissipation (Max)
  • 6.25W Tc
  • Operating Temperature
  • -65°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Series
  • TrenchMOS™
  • Published
  • 1997
  • JESD-609 Code
  • e3
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 4
  • ECCN Code
  • EAR99
  • Resistance
  • 10Ohm
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • 260
  • Pin Count
  • 4
  • JESD-30 Code
  • R-PDSO-G4
  • Element Configuration
  • Single
  • Operating Mode
  • ENHANCEMENT MODE
  • Power Dissipation
  • 6.25W
  • Case Connection
  • DRAIN
  • FET Type
  • N-Channel
  • Transistor Application
  • SWITCHING
  • Rds On (Max) @ Id, Vgs
  • 10 Ω @ 150mA, 5V
  • Vgs(th) (Max) @ Id
  • 2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
  • 40pF @ 10V
  • Vgs (Max)
  • ±20V
  • Continuous Drain Current (ID)
  • 520mA
  • Threshold Voltage
  • 2V
  • Gate to Source Voltage (Vgs)
  • 20V
  • Max Dual Supply Voltage
  • 100V
  • Drain to Source Breakdown Voltage
  • 100V
  • Feedback Cap-Max (Crss)
  • 6 pF
  • Height
  • 1.7mm
  • Length
  • 6.7mm
  • Width
  • 3.7mm
  • REACH SVHC
  • No SVHC
  • Radiation Hardening
  • No

Download datasheets and manufacturer documentation for NEXPERIA BSP110,115.

Datasheets:

PCN Design/Specification:

PCN Packaging:

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BSP110,115 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 40pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 520mA amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 100V, it can support the maximum dual supply voltage.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.

BSP110,115 Features


a continuous drain current (ID) of 520mA
a drain-to-source breakdown voltage of 100V voltage
a threshold voltage of 2V


BSP110,115 Applications


There are a lot of Nexperia USA Inc.
BSP110,115 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

User Guide

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Step1：Prepare product

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Step2：Desiccant Protection

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Step3：Vacuum Packaging

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Step4：Individual Package

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Step5：Anti-collision Filling

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DELIVERY TIME

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2. For in-stock parts, orders normally could be shipped out within 1-2days.

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