NEXPERIA BSS138AKAR

Manufacturer No:

BSS138AKAR

Manufacturer:

NEXPERIA

Package:

TO-236-3, SC-59, SOT-23-3

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.5 ? @ 100mA, 10V ±20V 47pF @ 30V 0.51nC @ 4.5V TO-236-3, SC-59, SOT-23-3

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BSS138AKAR information

NEXPERIA BSS138AKAR technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BSS138AKAR.

Type
Parameter

Factory Lead Time
4 Weeks

Contact Plating
Tin

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Surface Mount
YES

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2014

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Pin Count
3

Number of Elements
1

Number of Channels
1

Power Dissipation-Max
300mW Ta 1.06W Tc

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Turn On Delay Time
5 ns

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
4.5 ? @ 100mA, 10V

Vgs(th) (Max) @ Id
1.5V @ 250mA

Input Capacitance (Ciss) (Max) @ Vds
47pF @ 30V

Current - Continuous Drain (Id) @ 25°C
200mA Ta

Gate Charge (Qg) (Max) @ Vgs
0.51nC @ 4.5V

Rise Time
6ns

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

Fall Time (Typ)
22 ns

Turn-Off Delay Time
36 ns

Continuous Drain Current (ID)
200mA

Gate to Source Voltage (Vgs)
20V

Max Dual Supply Voltage
60V

Drain Current-Max (Abs) (ID)
0.2A

Drain-source On Resistance-Max
5.2Ohm

Drain to Source Breakdown Voltage
60V

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for NEXPERIA BSS138AKAR.

BSS138AKAR Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 47pF @ 30V.This device has a continuous drain current (ID) of [200mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.A device's drain current is its maximum continuous current, and this device's drain current is 0.2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 60V.Its overall power consumption can be reduced by using drive voltage (10V).

BSS138AKAR Features

a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 36 ns

BSS138AKAR Applications

There are a lot of Nexperia USA Inc.
BSS138AKAR applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

User Guide

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