NEXPERIA PSMN057-200B,118

Manufacturer No:

PSMN057-200B,118

Manufacturer:

NEXPERIA

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

N-Channel Tape & Reel (TR) 57m Ω @ 17A, 10V ±20V 3750pF @ 25V 96nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

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PSMN057-200B,118 information

NEXPERIA PSMN057-200B,118 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN057-200B,118.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount
YES

Number of Pins
3

Transistor Element Material
SILICON

Current - Continuous Drain (Id) @ 25℃
39A Tc

Drive Voltage (Max Rds On, Min Rds On)
10V

Number of Elements
1

Power Dissipation (Max)
250W Tc

Turn Off Delay Time
105 ns

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Series
TrenchMOS™

Published
2013

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Terminal Finish
Tin (Sn)

HTS Code
8541.29.00.75

Terminal Form
GULL WING

Pin Count
3

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
250W

Case Connection
DRAIN

Turn On Delay Time
18 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
57m Ω @ 17A, 10V

Vgs(th) (Max) @ Id
4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
3750pF @ 25V

Gate Charge (Qg) (Max) @ Vgs
96nC @ 10V

Rise Time
58ns

Vgs (Max)
±20V

Fall Time (Typ)
78 ns

Continuous Drain Current (ID)
39A

Gate to Source Voltage (Vgs)
20V

Max Dual Supply Voltage
200V

Drain-source On Resistance-Max
0.057Ohm

Drain to Source Breakdown Voltage
200V

Pulsed Drain Current-Max (IDM)
156A

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for NEXPERIA PSMN057-200B,118.

PSMN057-200B,118 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3750pF @ 25V.This device conducts a continuous drain current (ID) of 39A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).Pulsed drain current is maximum rated peak drain current 156A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 200V power, it supports a dual voltage supply of up to maximum.

PSMN057-200B,118 Features

a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 200V voltage
based on its rated peak drain current 156A.

PSMN057-200B,118 Applications

There are a lot of Nexperia USA Inc.
PSMN057-200B,118 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

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