INFINEON BFS481H6327XTSA1

Manufacturer No:

BFS481H6327XTSA1

Manufacturer:

INFINEON

Package:

6-VSSOP, SC-88, SOT-363

Description:

RF Bipolar Transistors RF BIP TRANSISTOR

Quantity:

Delivery:

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BFS481H6327XTSA1 information

INFINEON BFS481H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BFS481H6327XTSA1.

Type
Parameter

Factory Lead Time
4 Weeks

Contact Plating
Tin

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
6-VSSOP, SC-88, SOT-363

Number of Pins
6

Transistor Element Material
SILICON

Collector-Emitter Breakdown Voltage
12V

Number of Elements
2

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Published
2007

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
6

ECCN Code
EAR99

Max Power Dissipation
175mW

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Frequency
8GHz

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Base Part Number
BFS481

Reference Standard
AEC-Q101

Power Dissipation
175mW

Transistor Application
AMPLIFIER

Halogen Free
Halogen Free

Transistor Type
2 NPN (Dual)

Collector Emitter Voltage (VCEO)
12V

Max Collector Current
20mA

DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 5mA 8V

Gain
20dB

Transition Frequency
8000MHz

Max Breakdown Voltage
12V

Collector Base Voltage (VCBO)
20V

Emitter Base Voltage (VEBO)
2V

Collector-Base Capacitance-Max
0.4pF

Noise Figure (dB Typ @ f)
0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

Height
800μm

Length
2mm

Width
1.25mm

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for INFINEON BFS481H6327XTSA1.

Product Description:

The BFS481H6327XTSA1 is a high-frequency, surface-mount, dual NPN transistor from Infineon Technologies, designed for use in various RF amplifier applications. This transistor features a high DC current gain (hFE) of 70 at 5mA and 8V, making it suitable for amplifying low-level signals.

Features:

High-frequency operation up to 8GHz
High DC current gain (hFE) of 70 at 5mA and 8V
Low noise figure of 0.9dB to 1.2dB at 900MHz to 1.8GHz
High power dissipation of 175mW
Halogen-free and lead-free packaging
RoHS3 compliant
Operating temperature range of 150°C TJ

Applications:

Primary applications: RF amplifiers, especially in wireless communication systems
Secondary applications: Audio amplifiers, power supplies, and other high-frequency applications

Alternative Parts:

BFS481 (base part number)
BFS481H6327 (alternative part number)

Embedded Modules:

Various RF amplifier modules and systems
Wireless communication systems, such as Wi-Fi, Bluetooth, and cellular networks
Audio amplifier modules and systems

FAQs:

Q: What is the maximum collector current of this transistor? A: The maximum collector current is 20mA.

Q: What is the maximum power dissipation of this transistor? A: The maximum power dissipation is 175mW.

Q: Is this transistor suitable for high-temperature applications? A: Yes, this transistor can operate at an operating temperature of 150°C TJ.

Q: What is the packaging type of this transistor? A: The packaging type is Tape & Reel (TR) in a 6-VSSOP, SC-88, SOT-363 package.

Q: Is this transistor RoHS compliant? A: Yes, this transistor is RoHS3 compliant.

Q: What is the frequency range of this transistor? A: The frequency range of this transistor is up to 8GHz.

Q: What is the noise figure of this transistor? A: The noise figure of this transistor is 0.9dB to 1.2dB at 900MHz to 1.8GHz.

Q: What is the DC current gain (hFE) of this transistor? A: The DC current gain (hFE) of this transistor is 70 at 5mA and 8V.

User Guide

PURCHASE

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IMPORTANT NOTICE

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SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.