INFINEON BFS17PE6327HTSA1
Manufacturer No:
BFS17PE6327HTSA1
Manufacturer:
INFINEON
Package:
TO-236-3, SC-59, SOT-23-3
Description:
Trans GP BJT NPN 15V 0.025A 3-Pin SOT-23 T/R
Quantity:
In Stock :4148
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Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 3 - Thu, Jun 4, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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BFS17PE6327HTSA1 Information
INFINEON BFS17PE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BFS17PE6327HTSA1.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Collector-Emitter Breakdown Voltage
- 15V
- Number of Elements
- 1
- hFEMin
- 20
- Operating Temperature
- 150°C TJ
- Type
- Parameter
- Packaging
- Tape & Reel (TR)
- Published
- 2005
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Last Time Buy
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Termination
- SMD/SMT
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
Download datasheets and manufacturer documentation for INFINEON BFS17PE6327HTSA1.
Other Related Documents:
PCN Packaging:
ConflictMineralStatement:
Product Description:
The BFS17PE6327HTSA1 is a surface-mount NPN bipolar junction transistor (BJT) from Infineon Technologies, designed for high-frequency amplifier applications. This transistor features a high current rating of 25mA and a high power dissipation of 280mW, making it suitable for a wide range of applications.
Features:
- High-frequency operation up to 2.5MHz
- High current rating of 25mA
- High power dissipation of 280mW
- Low noise figure of 3.5dB to 5dB at 800MHz
- High DC current gain (hFE) of 40 at 2mA and 1V
- Operating temperature range of -40°C to 150°C
- Available in a compact TO-236-3, SC-59, and SOT-23-3 package
Applications:
- Primary applications: High-frequency amplifiers, radio frequency (RF) amplifiers, and switching amplifiers
- Secondary applications: Audio amplifiers, power supplies, and motor control circuits
Alternative Parts:
- BFS17PE6327HTSA1 is an alternative to other high-frequency NPN BJTs, such as the 2N3904 and the BC547.
Embedded Modules:
- This transistor is used in various embedded modules, including:
- Amplifier modules for audio and RF applications
- Power supply modules for DC-DC conversion
- Motor control modules for industrial automation
FAQs:
Q: What is the maximum collector-emitter breakdown voltage of this transistor? A: The maximum collector-emitter breakdown voltage is 15V.
Q: What is the maximum power dissipation of this transistor? A: The maximum power dissipation is 280mW.
Q: What is the operating temperature range of this transistor? A: The operating temperature range is -40°C to 150°C.
Q: Is this transistor lead-free? A: Yes, this transistor is lead-free.
Q: What is the noise figure of this transistor? A: The noise figure is 3.5dB to 5dB at 800MHz.
Q: What is the DC current gain (hFE) of this transistor? A: The DC current gain (hFE) is 40 at 2mA and 1V.
Q: Is this transistor radiation-hardened? A: No, this transistor is not radiation-hardened.
Q: What is the packaging type of this transistor? A: The packaging type is Tape & Reel (TR).
Q: What is the part status of this transistor? A: The part status is Last Time Buy.
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