Harris 2N6293

Manufacturer No:

2N6293

Manufacturer:

Harris

Package:

TO-220-3

Description:

NPN -65°C ~ 150°C (TJ) 1mA TO-220-3 Through Hole

Quantity:

Delivery:

Payment:

In Stock :Available

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2N6293 information

Harris 2N6293 technical specifications, attributes, parameters and parts with similar specifications to Harris 2N6293.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3

Supplier Device Package
TO-220

Mfr
Harris Corporation

Package
Bulk

Product Status
Active

Operating Temperature
-65°C ~ 150°C (TJ)

Power - Max
40 W

Transistor Type
NPN

DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 2A, 4V

Current - Collector Cutoff (Max)
1mA

Vce Saturation (Max) @ Ib, Ic
3.5V @ 3A, 7A

Voltage - Collector Emitter Breakdown (Max)
80 V

Current - Collector (Ic) (Max)
7 A

Frequency - Transition
10MHz

Download datasheets and manufacturer documentation for Harris 2N6293.

2N6293 Overview

This device has a DC current gain of 30 @ 2A, 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-220.Detection of Collector Emitter Breakdown at 80 V maximal voltage is present.

2N6293 Features

the DC current gain for this device is 30 @ 2A, 4V
the vce saturation(Max) is 3.5V @ 3A, 7A
the supplier device package of TO-220

2N6293 Applications

There are a lot of Harris Corporation
2N6293 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

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