Harris BDX33DS
Manufacturer No:
BDX33DS
Manufacturer:
Harris
Package:
TO-220-3
Description:
NPN - Darlington -65°C ~ 150°C (TJ) 500?A TO-220-3 Through Hole
Quantity:
In Stock :5471
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Expected Shipping：Sun, Jun 7 - Mon, Jun 8, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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BDX33DS Information
Harris BDX33DS technical specifications, attributes, parameters and parts with similar specifications to Harris BDX33DS.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220
- Mfr
- Harris Corporation
- Package
- Bulk
- Product Status
- Active
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Power - Max
- 2 W
- Transistor Type
- NPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 750 @ 3A, 3V
- Type
- Parameter
- Current - Collector Cutoff (Max)
- 500?A
- Vce Saturation (Max) @ Ib, Ic
- 2.5V @ 6mA, 3A
- Voltage - Collector Emitter Breakdown (Max)
- 120 V
- Current - Collector (Ic) (Max)
- 10 A
Download datasheets and manufacturer documentation for Harris BDX33DS.
BDX33DS Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 3A, 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 120 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BDX33DS Features
the DC current gain for this device is 750 @ 3A, 3V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the supplier device package of TO-220
BDX33DS Applications
There are a lot of Harris Corporation
BDX33DS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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