Harris IRFD112
Manufacturer No:
IRFD112
Manufacturer:
Harris
Package:
4-DIP (0.300", 7.62mm)
Description:
MOSFET (Metal Oxide) N-Channel 800mOhm @ 800mA, 10V ±20V 135 pF @ 25 V 7 nC @ 10 V 100 V 4-DIP (0.300", 7.62mm)
Quantity:
In Stock :3271
Looking for price or availability? Send us an RFQ and our sales team will respond quickly.
Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 3 - Thu, Jun 4, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
Payment
We support multiple secure payment methods including PayPal, Visa, MasterCard, and American Express. All transactions are protected with advanced encryption to ensure secure and reliable payments.
Authenticity Guarantee
All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.
Quality Assurance
Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.
User Guide
Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.
PURCHASE
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
MEANS OF PAYMENTFor your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.
RFQ (REQUEST FOR QUOTATIONS)Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRFD112 Information
Harris IRFD112 technical specifications, attributes, parameters and parts with similar specifications to Harris IRFD112.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- 4-DIP (0.300", 7.62mm)
- Supplier Device Package
- 4-DIP, Hexdip
- Mfr
- Harris Corporation
- Package
- Bulk
- Product Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Power Dissipation (Max)
- 1W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 800mOhm @ 800mA, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 135 pF @ 25 V
- Current - Continuous Drain (Id) @ 25°C
- 800mA (Tc)
- Gate Charge (Qg) (Max) @ Vgs
- 7 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 100 V
- Vgs (Max)
- ±20V
Download datasheets and manufacturer documentation for Harris IRFD112.
IRFD112 Overview
The maximum input capacitance of this device is 135 pF @ 25 V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 100 V in order to operate.
IRFD112 Features
a 100 V drain to source voltage (Vdss)
IRFD112 Applications
There are a lot of Harris Corporation
IRFD112 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
