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BSZ096N10LS5ATMA1 Description

BSZ096N10LS5ATMA1 is an OptiMOSTM5 Power-Transistor. Infineon's OptiMOS? 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The BSZ096N10LS5ATMA1 low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

BSZ096N10LS5ATMA1 Features

Low RDS(on) in small package
Low gate charge
Lower output charge
Logic level compatibility
Higher switching frequency

BSZ096N10LS5ATMA1 Applications

healthcare
automotive
manufacturing industries
Adapter
Telecom

Images	Part Number	Mfr	Description	Datasheet	Availability	Price	Qty	RFQ	Rohs
	BSZ096N10LS5	INFINEON	Power Field-Effect Transistor	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote
	BSZ096N10LS5ATMA1	INFINEON	Tape & Reel (TR) 8-PowerTDFN	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote

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