DIODES ZXTN25100DZTA

Manufacturer No:

ZXTN25100DZTA

Manufacturer:

DIODES

Package:

TO-243AA

Description:

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount

Quantity:

In Stock :6314

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Expected Shipping：Sun, Jun 7 - Mon, Jun 8, 2026

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Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

ZXTN25100DZTA Information

DIODES ZXTN25100DZTA technical specifications, attributes, parameters and parts with similar specifications to DIODES ZXTN25100DZTA.

Type
Parameter

Factory Lead Time
15 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-243AA

Number of Pins
4

Weight
51.993025mg

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2007

Type
Parameter

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn)

Subcategory
Other Transistors

Max Power Dissipation
4.46W

Terminal Form
FLAT

Download datasheets and manufacturer documentation for DIODES ZXTN25100DZTA.

ZXTN25100DZTA Overview

In this device, the DC current gain is 300 @ 10mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 345mV @ 250mA, 2.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 175MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2.5A volts at Single BJT transistors maximum.

ZXTN25100DZTA Features

the DC current gain for this device is 300 @ 10mA 2V
the vce saturation(Max) is 345mV @ 250mA, 2.5A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz